2PD601ART
50 V, 100 mA NPN general-purpose transistor
Rev. 01 — 15 March 2007
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
PNP complement: 2PB709ART.
1.2 Features
I
General-purpose transistor
I
Small SMD plastic package
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 10 V;
I
C
= 2 mA
Conditions
open base
Min
-
-
210
Typ
-
-
-
Max
50
100
340
Unit
V
mA
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
2
sym021
Simplified outline
3
Symbol
3
1
NXP Semiconductors
2PD601ART
50 V, 100 mA NPN general-purpose transistor
3. Ordering information
Table 3.
Ordering information
Package
Name
2PD601ART
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
C3*
Type number
2PD601ART
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
-
−65
−65
Max
60
50
6
100
200
100
250
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2PD601ART_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 15 March 2007
2 of 10
NXP Semiconductors
2PD601ART
50 V, 100 mA NPN general-purpose transistor
300
P
tot
(mW)
200
006aaa990
100
0
−75
−25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig 1. Power derating curve
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
500
140
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2PD601ART_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 15 March 2007
3 of 10
NXP Semiconductors
2PD601ART
50 V, 100 mA NPN general-purpose transistor
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
10
0.02
0.01
0
006aaa991
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB); typical values
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
= 60 V; I
E
= 0 A
V
CB
= 60 V; I
E
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 2 V;
I
C
= 100 mA
V
CE
= 10 V;
I
C
= 2 mA
V
CEsat
f
T
collector-emitter
saturation voltage
transition frequency
I
C
= 100 mA;
I
B
= 10 mA
V
CE
= 10 V;
I
C
= 2 mA;
f = 100 MHz
V
CB
= 10 V;
I
E
= i
e
= 0 A;
f = 1 MHz
[1]
Min
-
-
-
90
210
-
100
Typ
-
-
-
-
-
-
-
Max
10
5
10
-
340
250
-
Unit
nA
µA
nA
I
EBO
h
FE
mV
MHz
C
c
collector capacitance
-
-
3
pF
[1]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2PD601ART_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 15 March 2007
4 of 10
NXP Semiconductors
2PD601ART
50 V, 100 mA NPN general-purpose transistor
500
h
FE
(1)
006aaa992
0.1
I
C
(A)
0.08
006aaa993
I
B
(mA) = 0.56
0.50
0.44
0.38
0.32
400
300
(2)
0.06
0.26
0.20
200
(3)
0.04
0.14
0.08
100
0.02
0.02
0
10
−1
1
10
I
C
(mA)
10
2
0
0
2
4
6
8
10
V
CE
(V)
V
CE
= 10 V
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
T
amb
= 25
°C
Fig 3. DC current gain as a function of collector
current; typical values
1.3
V
BEsat
(V)
0.9
006aaa994
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
1
006aaa995
V
CEsat
(V)
(1)
(2)
10
−1
0.5
(3)
(1)
(2)
(3)
0.1
10
−1
1
10
I
C
(mA)
10
2
10
−2
10
−1
1
10
I
C
(mA)
10
2
I
C
/I
B
= 10
(1) T
amb
=
−55 °C
(2) T
amb
= 25
°C
(3) T
amb
= 150
°C
I
C
/I
B
= 10
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
Fig 5. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
2PD601ART_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 15 March 2007
5 of 10
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