2SJ377
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L
−π−MOSV)
2
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drain−source ON-resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0.16
Ω
(typ.)
: |Y
fs
| = 4.0 S (typ.)
Unit: mm
: I
DSS
=
−100
µA (max) (V
DS
=
−60
V)
: V
th
=
−0.8~−2.0
V (V
DS
=
−10
V, I
D
=
−1
mA)
Maximum Ratings
(Ta = 25°C)
Characteristic
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−60
−60
±20
−5
−20
20
273
−5
2
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
SC-64
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
6.25
125
Unit
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
−25
V, T
ch
= 25°C (initial), L = 14.84 mH,
R
G
= 25
Ω,
I
AR
=
−5
A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
JEDEC
JEITA
TOSHIBA
―
SC-64
2-7J1B
Weight: 0.36 g (typ.)
1
2005-03-04
2SJ377
Electrical Characteristics
(Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
V
DS
=
−10
V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
=
−60
V, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 0 V
V
DS
=
−10
V, I
D
=
−1
mA
V
GS
=
−4
V, I
D
=
−2.5
A
V
GS
=
−10
V, I
D
=
−2.5
A
V
DS
=
−10
V, I
D
=
−2.5
A
Min
—
—
−60
−0.8
—
—
2.0
—
—
—
—
Typ.
—
—
—
—
0.24
0.16
4.0
630
95
290
25
Max
±10
−100
—
−2.0
0.28
0.19
—
—
—
—
—
pF
Unit
µA
µA
V
V
Ω
S
Turn−on time
Switching time
Fall time
t
on
—
45
—
ns
t
f
—
55
—
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
t
off
Q
g
Q
gs
Q
gd
V
DD
≈ −48
V, V
GS
=
−10
V, I
D
=
−5
A
—
—
—
—
200
22
16
6
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Qrr
Test Condition
—
—
I
DR
=
−5
A, V
GS
= 0 V
I
DR
=
−5
A, V
GS
= 0 V
dl
DR
/ dt = 50 A / µS
Min
—
—
—
—
—
Typ.
—
—
—
80
0.1
Max
−5
−20
1.7
—
—
Unit
A
A
V
ns
µC
Marking
J377
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2005-03-04
Embedded System
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