1310nm InGaAsP strained MQW DFB-LD
KLT231544x, 2.5G DFB LD TO CAN
Description
KLT-231544x
is long wavelength distributed feedback(DFB) laser diode(LD) sources in TO-56 package with flat
window or ball lens or aspherical lens cap.
KLT-231544x
consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output
monitoring. It operates at 1310nm wavelength band and with data rates of 2.5 Gbps.
It is suitable for fabricating pigtailed LD source, TOSA(transmitter optical sub assembly), and bi-directional module.
FEATURES
High performance strained MQW InGaAsP LD with BH(buried hetero-junction) structure
Hermetically sealed TO-56 package with flat window or ball lens or aspherical lens cap
High reliability and environmental endurance
Operating wavelength of 1.3µm band
Operating temperature range from -20°C to 85°C
Data rates of 2.5Gbps
APPLICATIONS
LR1 SONET / SDC OC-3/ STM-1,OC-12/ STM-4,OC-48/STM-16
2.5Gbps Gigabit Ethernet
Suitable for fabrication of coaxial LD module, TOSA, and Bi-Di module
Passive Optical Networks
Analog and CATV
Absolute Maximum Ratings
Parameter
Operating temperature
Storage temperature
Peak laser forward current
Peak laser reverse voltage
Peak forward monitor PD current
Peak reverse monitor PD voltage
Symbol
T
op
T
stg
If
V
RL
I
FD
V
RD
Min
-20
-40
Max
85
100
150
2
2
20
unit
o
C
o
C
mA
V
mA
V
Optical and Electrical Characteristics (Top = 25°C otherwise specified)
Parameter
Symbol
Min
Typ
Max
Test Conditions
Unit
15
8
CW
mA
I
th
Threshold current
30
50
CW, Top = 85°C
P
f
5
mW CW, kink free
Rated output power
24
35
at rated Po=5mw
I
op
Operating current
mA
at rated Po=5mw, T
op
=85°C
50
60
V
op
1.5
1.1
V
Operating voltage
at rated Po=5mw
0.25
0.3
CW,Po=5mw
mW/mA
η
Slope efficiency
0.2
0.15
CW,Po=5mw,Top = 85°C
λc
nm at rated Po=5mw
1290 1310 1330
Center wavelength
30
40
SMSR
dB at rated Po=5mw
Side mode suppression ratio
t
r
0.1
0.2
ns 20 to 80%, I
b
= I
th
Optical rise and fall time
t
f
ns 80 to 20%, I
b
= I
th
0.1
0.2
I
m
0.05
mA at rated Po=5mw , V
rp
= 1V
0.2
Monitor PD current
I
d
µA
V
rp
= 10V
0.1
Monitor PD dark current
C
m
10
pF V
rp
= 10V, 1MHz
20
Monitor PD capacitance
Note: The engineering spec can be revised without any previous notice.
1/2
For more information on other parts available, please visit our website:
www.kodenshi.co.kr
KODENSHI KOREA CORP. 513-5 Eoyang-Dong, Iksan, 570-210, Korea
Rev.001
1310nm InGaAsP strained MQW DFB-LD
KLT231544x, 2.5G DFB LD TO CAN
Outline Drawing
(Aaspheric Lens type)
Pin connections
Pin config.
pin no. 1
pin no. 2
pin no. 3
pin no. 4
1
4G
case ground/LD anode
LD cathode
Monitor PD cathode
Monitor PD anode
4S
Case ground
LD cathode
Monitor PD anode
LD anode/m-PD cathode
4R
case ground/LD anode
m-PD anode
m-PD cathode
LD cathode
Ordering information
Device
KLT
Type
1 : FP(BH)
Wavelength
31
: 1310 nm
55 : 1550 nm
49 : 1490nm
Data Rate
0 : CW
3 : 622 Mbps
4 : 1.25 Gbps
5:
2.5Gbps
Operating
Temp[℃]
0 : 0~50℃
1 : 0~70℃
2 : -20~70℃
3 : 0~85℃
4
: -20~85℃
5 : -40~85℃
Package type
1 : ball lens cap(Ø1.5)
2 : ball lens cap(Ø2.0)
3 : window cap
4
: aspheric lens cap
Pin Config.
S : 4S type
G : 4G type
R : 4R type
3 : 3G
KODENSHI
2
: DFB
LD TO CAN
2/2
For more information on other parts available, please visit our website:
www.kodenshi.co.kr
KODENSHI KOREA CORP. 513-5 Eoyang-Dong, Iksan, 570-210, Korea
Rev.001
MCU
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