2N7085
MECHANICAL DATA
Dimensions in mm(inches)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
N–CHANNEL
ENHANCEMENT MODE
TRANSISTOR
16.38 (0.645)
16.89 (0.665)
13.38 (0.527)
13.64 (0.537)
3.56 (0.140)
Dia.
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
1 2 3
12.07 (0.500)
19.05 (0.750)
V
(BR)DSS
I
D(A)
R
DS(on)
0.64 (0.025)
Dia.
0.89 (0.035)
100V
20A
0.075
W
2.54 (0.100)
BSC
3.05 (0.120)
BSC
FEATURES
• TO257AB HERMETIC PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
• SCREENING OPTIONS AVAILBLE
TO–257AB Metal Package
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
T
L
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current (T
J
= 150°C)
Pulsed Drain Current
Power Dissipation
T
C
= 25°C
T
C
= 100°C
Operating Junction and Storage Temperature Range
Lead Temperature (
1/16
” from case for 10 sec.)
T
C
= 25°C
T
C
= 100°C
100V
±20V
20A
12A
80A
60W
20W
–55 to 150°C
300°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/99
2N7085
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
Test Conditions
I
D
= 250µA
I
D
= 250µA
V
GS
= ±20V
T
J
= 125°C
V
GS
= 10V
T
J
= 125°C
I
DS
= 12A
5.0
20
0.06
0.11
8.0
1400
480
110
35
10
18
13
85
35
75
50
20
25
30
120
80
95
20
80
I
F
= 20A
I
F
= 20A
di/dt = 100A/µs
V
GS
= 0
150
0.5
2.5
400
ns
nC
pF
0.075
0.14
Min.
100
2
Typ.
Max.
Unit
V
STATIC ELECTRICAL RATINGS
V
(BR)DSS
Drain–Source Breakdown Voltage V
GS
= 0
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
1
Pulse
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current
1
Drain – Source On–State
Resistance
1
V
DS
= V
GS
V
DS
= 0
V
DS
= 80V
V
GS
= 0
V
DS
= 10V
V
GS
= 10V
I
D
= 12A
V
DS
= 15V
V
GS
= 0
V
DS
= 25V
f = 1MHz
4
±100
25
250
V
nA
µA
A
W
S
Forward Transconductance
1
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate Source Charge
2
Gate Drain Charge
2
Turn–On Delay Time
2
Rise Time
2
Turn–Off Delay Time
2
Fall Time
2
Continuous Current
Pulsed Current
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
V
DS
= 0.5 x V
(BR)DSS50V
V
GS
= 10V
V
DD
= 50V
R
L
= 2.5
W
V
GEN
=10V
I
D
= 20A
I
D
= 20A
R
G
= 4.7
W
SOURCE – DRAIN DIODE CHARACTERISTICS
A
V
ns
µC
test : Pulse Width < 300
m
s ,Duty Cycle < 2%
2
Independent of Operating Temperature
THERMAL RESISTANCECHARACTERISTICS
Parameter
R
thJC
R
thJA
R
thCS
Thermal resistance Junction-Case
Thermal resistance Junction-ambient
Thermal resistance Case to Sink
1.0
Min.
Typ.
Max.
2.1
80
Unit
°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/99
Renesas Electronics MCUs
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