2N7081–220M–ISO
MECHANICAL DATA
Dimensions in mm(inches)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
N–CHANNEL
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
100V
11A
Ω
0.15Ω
10.41 (0.410)
10.67 (0.420)
16.38 (0.645)
16.89 (0.665)
13.38 (0.527)
13.64 (0.537)
3.56 (0.140)
Dia.
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
1 2 3
12.07 (0.500)
19.05 (0.750)
FEATURES
• TO–220 ISOLATED HERMETIC PACKAGE
• LOW RDS
(ON)
0.64 (0.025)
Dia.
0.89 (0.035)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
• SIMPLE DRIVE REQUIREMENTS
TO–220 Metal Package
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
T
L
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
T
C
= 25°C
T
C
= 100°C
Operating and Storage Temperature Range
Lead Temperature (
1/16
” from case for 10 sec.)
T
C
= 25°C
T
C
= 100°C
100V
±20V
11A
7.7A
48A
45W
18W
–55 to 150°C
300°C
Semelab plc
Telephone (01455) 556565
E-mail: sales@semelab.co.uk
Fax (01455) 552612.
Web site: http://www.semelab.co.uk
Prelim. 6/98
2N7081–220M–ISO
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Gate Threshold Voltage
V
GS(th)
Gate – Body Leakage
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
R
θJC
R
θJA
R
θCS
Zero Gate Voltage Drain Current
On–State Drain Current
Static Drain – Source On–State
Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
PACKAGE CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
1
I
F
=11
I
F
= I
S
dI
F
/dt = 100A/µs
V
GS
= 0
100
0.7
2.8
80
K/W
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
DD
= 50V
V
GEN
=10V
R
L
= 4.1Ω
R
G
= 7.5Ω
I
D
= 11A
600
190
35
7
45
30
10
12
48
2.5
300
ns
pF
Test Conditions
V
GS
= 0
V
DS
= V
GS
V
DS
= 0
V
DS
= 80V
V
GS
= 0
V
DS
= 10V
V
GS
= 10V
I
D
= 7.7A
V
DS
= 15V
T
J
= 125°C
I
DS
= 7.7A
T
J
= 125°C
V
GS
= 10V
I
D
= 250µA
I
D
= 250µA
V
GS
= ±20V
Min.
100
2
Typ.
Max.
Unit
V
4
±100
25
250
V
nA
µA
A
11
0.12
0.22
4
5
0.15
0.27
Ω
S
SOURCE – DRAIN DIODE CHARACTERISTICS
A
V
ns
µC
Semelab plc
Telephone (01455) 556565
E-mail: sales@semelab.co.uk
Fax (01455) 552612.
Web site: http://www.semelab.co.uk
Prelim. 6/98
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