2N7086
MECHANICAL DATA
Dimensions in mm(inches)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
N–CHANNEL
ENHANCEMENT MODE
TRANSISTOR
16.38 (0.645)
16.89 (0.665)
13.38 (0.527)
13.64 (0.537)
3.56 (0.140)
Dia.
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
1 2 3
12.07 (0.500)
19.05 (0.750)
V
(BR)DSS
I
D(A)
R
DS(on)
0.64 (0.025)
Dia.
0.89 (0.035)
200V
14A
Ω
0.16Ω
2.54 (0.100)
BSC
3.05 (0.120)
BSC
FEATURES
• TO257AB HERMETIC PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
• SCREENING OPTIONS AVAILBLE
TO–257AB Metal Package
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
T
L
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
T
C
= 25°C
T
C
= 100°C
Operating and Storage Temperature Range
Lead Temperature (
1/16
” from case for 10 sec.)
T
C
= 25°C
T
C
= 100°C
200V
±20V
14A
8.5A
56A
60W
23W
–55 to 150°C
300°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 1/99
2N7086
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
Test Conditions
I
D
= 250µA
I
D
= 250µA
V
GS
= ±20V
T
J
= 125°C
V
GS
= 10V
T
J
= 125°C
I
DS
= 8.5A
5.0
1550
500
220
30
4.6
13
44
10
26
10
60
30
40
77
15
35
30
100
80
95
114
56
I
F
= I
S
I
F
= I
S
dI
F
/dt = 100A/µs
V
GS
= 0
150
0.5
2.0
650
ns
nC
pF
14
0.14
0.25
0.16
0.30
Min.
200
2
Typ.
Max.
Unit
V
STATIC ELECTRICAL RATINGS
BV
(BR)DSS
Drain–Source Breakdown Voltage V
GS
= 0
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
1
Pulse
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current
1
Static Drain – Source On–State
Resistance
1
V
DS
= V
GS
V
DS
= 0
V
DS
= 160V
V
GS
= 0
V
DS
= 10V
V
GS
= 10V
I
D
= 8.5A
V
DS
= 15V
V
GS
= 0
V
DS
= 25V
f = 1MHz
4
±100
25
250
V
nA
µA
A
Ω
S
Forward Transconductance
1
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate Source Charge
2
Gate Drain Charge
2
Turn–On Delay Time
2
Rise Time
2
Turn–Off Delay Time
2
Fall Time
2
Continuous Current
Pulse Current
3
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
DS
= 0.5 x V
(BR)DSS
V
GS
= 10V
V
DD
= 100V
V
GEN
=10V
R
L
= 7.1Ω
R
G
= 4.7Ω
I
D
= 14A
I
D
= 14A
SOURCE – DRAIN DIODE CHARACTERISTICS
A
V
ns
µC
test : Pulse Width < 300µs ,Duty Cycle < 2%
2
Independent of Operating Temperature
3
Pulse width Limited by maximum Junction Temperature
THERMAL RESISTANCECHARACTERISTICS
Parameter
R
thJC
R
thJA
R
thCS
Thermal resistance Junction-Case
Thermal resistance Junction-ambient
Thermal resistance Junction-ambient
1.0
Min.
Typ.
Max.
2.1
80
Unit
K/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 1/99
stm32/stm8
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