SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N4238
•
•
•
VCBO=80V(Min), VCEO=60V(Min)
Hermetic TO-39 Metal package.
Ideally suited for General Purpose and
Amplifier Applications
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
80V
60V
6V
1.0A
0.5A
1.0W
5.7mW/°C
6W
34mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
R
θJC
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
175
29
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8368
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N4238
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)CEO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Test Conditions
IC = 10mA
VCE = 80V
IB = 0
VBE = -1.5V
VBE = -1.5V
TA = 150°C
IE = 0
IC = 0
VCE = 1.0V
VCE = 1.0V
TA = -55°C
IC = 500mA
VCE = 1.0V
IB = 50mA
IB = 0.1A
IB = 50mA
IB = 0.1A
Min.
60
Typ
Max.
Units
V
100
25
100
0.5
30
30
15
30
0.3
0.6
1.0
1.5
150
nA
µA
nA
mA
ICEX
VCE = 50V
VCB = 80V
VEB = 6V
IC = 100mA
ICBO
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
hFE
(1)
Forward-current transfer
ratio
IC = 250mA
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
IC = 500mA
IC = 1.0A
IC = 500mA
IC = 1.0A
V
VBE(sat)
(1)
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
Output Capacitance
IC = 100mA
f = 10MHz
VCB = 10V
f = 1.0MHz
IE = 0
100
pF
VCE = 10V
3.0
Cobo
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8368
Issue 1
Page 2 of 3
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N4238
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
45°
TO-39 (TO-205AD) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8368
Issue 1
Page 3 of 3
Embedded System
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