LAB
MECHANICAL DATA
Dimensions in mm
SEME
2N4240
NPN TRANSISTOR
MEDIUM POWER
HIGH VOLTAGE
6.35 (0.250)
8.64 (0.340)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
APPLICATIONS
0.71 (0.028)
0.86 (0.034)
11.94 (0.470)
12.70 (0.500)
24.33 (0.958)
24.43 (0.962)
Designed for switching regulator
applications where high frequency and
high voltage swings are required.
14.48 (0.570)
14.99 (0.590)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
TO66 Package.
ABSOLUTE MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
V
CEO
V
CB
V
EB
I
C
I
C
I
B
P
D
T
J
, T
stg
R
q
JC
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Continuous
Peak (1)
Base Current
Total Power Dissipation
Derate above 25 °C
Operating and Storage Junction Temperature Range
Thermal Resistance , Junction To Case
300V
500V
6V
2A
5A
1A
35W
0.2W / °C
-65 to 200 °C
5.0°C / W
NOTES:
(1) Pulse Test: Pulse Width = 5.0 ms , Duty Cycle
£
10%.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 8/93
2N4240
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C , unless otherwise stated)
OFF CHARACTERISTICS
Parameter
Test Conditions
Collector – Emitter
V
CEO(sus)
I
C
= 200mA , I
B
= 0
Sustaining Voltage
Collector Cutoff Current V
CE
= 150V , I
B
= 0
I
CEO
V
CE
= 450V , V
BE(off)
= 1.5V
I
CEX
Collector Cutoff Current
V
CE
= 450V , V
BE(off)
= 1.5V , T
C
=150°C
I
EBO
Emitter Cutoff Current
V
BE
= 6V , I
C
= 0
ON CHARACTERISTICS
(1)
Parameter
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
I
s/b
Current Gain
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
Base – Emitter
On Voltage
Second Breakdown
Collector Current
Test Conditions
I
C
= 0.1A , V
CE
= 10V
I
C
= 0.75A , V
CE
= 2V
I
C
= 0.75A , V
CE
= 10V
I
C
= 0.75A , I
B
= 75mA
I
C
= 0.75A , I
B
= 75mA
I
C
= 0.1A , V
CE
= 10V
(V
CC
= 100V)
350
Min.
300
5.0
2.0
5.0
0.5
Typ.
Max.
Unit.
V
mA
mA
mA
Min.
40
10
30
Typ.
Max.
100
150
1.0
1.8
1.4
Unit.
—
V
V
V
mA
DYNAMIC CHARACTERISTICS
Parameter
Test Conditions
Current Gain –
I
C
= 200mA , V
CE
= 10V
f
T
Bandwidth Product (2) f
test
= 5.0MHz
C
ob
Output Capacitance
V
CB
= 10V , I
E
= 0 , f = 1.0MHz
SWITCHING CHARACTERISTICS
Parameter
t
r
t
s
t
f
Rise Time
Storage Time
Fall Time
Test Conditions
V
CC
= 200V , I
C
= 0.75A
R
L
= 200
W
, I
B1
= 100mA
V
CC
= 200V , I
C
= 0.75A
I
B1
= I
B2
= 75mA
V
CC
= 200V , I
C
= 0.75A
I
B1
= I
B2
= 75mA
Min.
15
Typ.
Max.
Unit.
MHz
120
pF
Min.
Typ.
Max.
0.5
6.0
3.0
Unit.
m
S
S
S
m
m
NOTES:
(1) Pulse Test: Pulse Width = 300
m
s , Duty Cycle
£
2%
(2) f
T
=
|
h
fe
|
•
f
test
FIGURE 1 – SWITCHING TIME TEST CIRCUIT
RB AND RC varied to obtain desired current levels.
D1 must be fast recovery type.
For td and tr , D1 is disconnected and V2 = 0.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 8/93
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