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DZ2U2000L

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size334KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

DZ2U2000L Overview

Zener Diode

DZ2U2000L Parametric

Parameter NameAttribute value
MakerPanasonic
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeZENER DIODE
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DZ2U200
Silicon epitaxial planar type
For constant voltage / waveform clipper and surge absorption circuit
Low noise type
DZ27200 in USSMini2 type package
Features
Excellent rising characteristics of zener current I
Z
Low zener operating resistance R
Z
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
USSMini2-F2-B
Name
Pin
1. Cathode
2. Anode
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Marking Symbol: Z
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Repetitive peak forward current
Total power dissipation
*
Junction temperature
Storage temperature
Symbol
I
FRM
P
T
T
j
T
stg
Rating
200
120
150
–55 to +150
Unit
mA
mW
°C
°C
Note) *: P
T
= 120 mW achieved with a printed circuit board.
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Zener voltage
*1, 2
Zener operating resistance
Reverse current
Temperature coefficient of zener voltage
*3
Symbol
V
F
V
Z
R
Z
I
R
S
Z
I
F
= 10 mA
I
Z
= 5 mA
I
Z
= 5 mA
V
R
= 15 V
I
Z
= 5 mA
18.4
19.00
Conditions
Min
Typ
Max
1.0
21.00
80
0.05
Unit
V
V
W
mA
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for V
Z
measurement. V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
*2 : V
Z
guaranteed 20 ms after current flow.
*3 : T
j
= 25°C to 150°C
Publication date: March 2011
Ver. AED
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