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5GWJZ47

Description
schottky barrier type (high speed rectifier application)
CategoryDiscrete semiconductor    diode   
File Size148KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

5GWJZ47 Overview

schottky barrier type (high speed rectifier application)

5GWJZ47 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction3-10C3A, 2 PIN
Contacts2
Manufacturer packaging code3-10C3A
Reach Compliance Codeunknow
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
Maximum reverse current3500 µA
Maximum reverse recovery time0.035 µs
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
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