63CPT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 30 A
FEATURES
Base 2
common
cathode
Anode
TO-247AC
Anode
2
1 Common 3
cathode
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•
175 °C high performance Schottky diode
Very low forward voltage drop
Extremely low reverse leakage
Optimized V
F
vs. I
R
trade off for high efficiency
Increased ruggedness for reverse avalanche capability
RBSOA available
Negligible switching losses
Submicron trench technology
Full lead (Pb)-free and RoHS compliant devices
Designed and qualified for industrial level
APPLICATIONS
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at 30 A at 125 °C
2 x 30 A
100 V
0.64 V
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High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
Dc-to-dc systems
Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
V
F
T
J
30 Apk, T
J
= 125 °C (typical, per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
60
100
0.61
- 55 to 175
UNITS
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 25 °C
63CPT100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 156 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 3 A, L = 30 mH
Limited by frequency of operation and time pulse duration so
that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
See fig. 8
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
60
2200
450
135
I
AS
at
T
J
max.
mJ
A
A
UNITS
Document Number: 94535
Revision: 07-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
63CPT100
Vishay High Power Products
High Performance
Schottky Generation 5.0,
2 x 30 A
TEST CONDITIONS
30 A
Forward voltage drop per leg
V
FM (1)
60 A
30A
60 A
Reverse leakage current per leg
Junction capacitance per leg
Series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
TYP.
-
-
-
-
-
-
1650
7.5
-
MAX.
0.77
0.9
0.64
076
200
15
-
-
10 000
µA
mA
pF
nH
V/µs
V
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
V
R
= Rated V
R
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
VALUES
- 55 to 175
0.8
R
thJC
DC operation
0.4
R
thCS
Mounting surface, smooth and greased
0.25
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
63CPT100
°C/W
UNITS
°C
Mounting torque
Marking device
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94535
Revision: 07-Oct-08
63CPT100
High Performance
Vishay High Power Products
Schottky Generation 5.0,
2 x 30 A
1000
100
175 °C
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (mA)
150 °C
10
125 °C
1
100 °C
75 °C
0.1
50 °C
0.01
25 °C
0.001
100
T
J
= 175 °C
T
J
= 125 °C
10
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
1000
100
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
Single pulse
(Thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94535
Revision: 07-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
63CPT100
Vishay High Power Products
180
High Performance
Schottky Generation 5.0,
2 x 30 A
30
Allowable Case Temperature (°C)
170
165
Average Power Loss (W)
175
25
20
15
10
5
0
180°
120°
90°
60°
30°
RMS limit
DC
DC
160
155
150
145
0
5
10
15
20
25
30
35
40
45
Square
wave
(D = 0.50)
80 %
rated
V
r
applied
see note (1)
0
5
10
15
20
25
30
35
40
45
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
10 000
I
FSM
- Non-Repetitive Surge
Current (A)
1000
100
10
100
1000
10 000
Square Wave Pulse Duration - t
p
(µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94535
Revision: 07-Oct-08
63CPT100
High Performance
Vishay High Power Products
Schottky Generation 5.0,
2 x 30 A
1000
Avalanche Current (A)
100
T
J
= 25 °C
10
T
J
= 125 °C
T
J
= 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
1000
Avalanche Energy (mJ)
100
T
J
= 25 °C
10
T
J
= 125 °C
T
J
= 175 °C
1
1
10
100
Rectangular Pulse Duration (µs)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Document Number: 94535
Revision: 07-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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