The SGA-6389 is a high performance SiGe HBT MMIC Amplifier.
A Darlington configuration featuring 1 micron emitters provides
high F
T
and excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. Only 2 DC-blocking capacitors, a bias resistor and
an optional RF choke are required for operation.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and is
RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that contain
SGA-6389
SGA-6389Z
Pb
RoHS Compliant
&
Green
Package
DC-4500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
•
Now available in Lead Free, RoHS
Compliant, & Green Packaging
•
Broadband Operation: DC-4500 MHz
• Cascadable 50ohm
Gain & Return Loss vs. Frequency
V
D
= 4.0 V, I
D
= 75 mA (Typ.)
20
GAIN
0
-10
ORL
IRL
• Patented SiGe Technology
Return Loss (dB)
15
Gain (dB)
10
5
0
0
1
2
3
Frequency (GHz)
4
5
• Operates From Single Supply
• Low Thermal Resistance Package
-20
-30
-40
Applications
•
PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Units
dB
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
Min.
14.1
Typ.
15.5
14.0
13.3
20.2
18.9
35.2
32.6
4500
1950 MHz
1950 MHz
1950 MHz
4.6
72
16.0
11.9
4.2
4.9
80
97
5.4
88
Max.
17.3
Symbol
G
Parameter
Small Signal Gain
P
1dB
OIP
3
Output Pow er at 1dB Compression
Output Third Order Intercept Point
dBm
dBm
MHz
dB
dB
dB
V
mA
°C/W
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8v
R
BIAS
= 39 ohms
I
D
= 80mA Typ.
T
L
= 25ºC
Test Conditions:
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all
such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100620 Rev. G
SGA-6389 DC-4500 MHz Cascadable MMIC Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Symbol
Parameter
Unit
100
500
850
1950
2400
3500
G
OIP
3
P
1dB
IRL
ORL
S
12
NF
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V
S
= 8v
R
BIAS
= 39 ohms
dB
dBm
dBm
dB
dB
dB
dB
15.7
36.6
20.1
22.3
14.7
20.4
4.0
15.6
36.0
20.4
27.5
14.5
20.2
3.7
15.5
35.2
20.2
27.4
14.8
20.3
3.8
14.0
32.6
18.9
16.0
11.9
20.1
4.2
13.3
31.2
18.1
13.7
10.8
19.7
4.4
12.0.
26.8
15.5
11.0
10.4
18.2
4.8
Test Condi-
tions:
I
D
= 80mA Typ.
T
L
= 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
Absolute Maximum Ratings
Noise Figure vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA
7
Noise Figure (dB)
6
5
4
3
Parameter
Max.
D evi ce C urrent
(I
D
)
Max.
D evi ce
Voltage (V
D
)
Max.
RF Input Power
Max.
Juncti on Temp
. (T
J
)
Operati ng T mp
. Range (T
L
)
e
Absolute Limit
1
60
mA
7V
+18 dBm
+150°C
-40°C to +85°C
+150°C
Max.
Storage Temp
.
T
L
=+25ºC
2
0
1
2
Frequency (GHz)
3
4
Operati on of thi s devi ce beyond any one of these li mi ts may
cause permanent damage. For reli able conti nous operati on,
the devi ce voltage and current must not exceed the maxi mum
operati ng values speci fi ed i n the table on page one.
Bi as C ondi ti ons should also sati sfy the followi ng expressi on:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
T ke i nto account out of band VSWR presented by devi ces
a
such as SAW fi lters to determi ne maxi mum RF i nput power.
Reflected harmoni c levels i n saturati on are si gni fi cant.
OIP
3
vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA
40
36
OIP
3
(dBm)
32
28
+25°C
P
1dB
vs. Frequency
V
D
= 4.9 v, I
D
= 80 mA
22
20
P
1dB
(dBm)
18
16
+25°C
24
20
0.0
0.5
T
L
-40°C
+85°C
14
12
T
L
0.0
0.5
1.0
-40°C
+85°C
1.0
1.5
2.0
2.5
3.0
3.5
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Frequency (GHz)
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100620 Rev. G
SGA-6389 DC-4500 MHz Cascadable MMIC Amplifier
Preliminary
|
S
|
vs. Frequency
21
|
S
|
vs. Frequency
11
20
V
D
= 4.9 v, I
D
= 80 mA
0
-10
|S
11
| (dB)
-20
-30
V
D
= 4.9 v, I
D
= 80 mA
15
|S
21
| (dB)
10
5
T
L
0
0
1
2
3
4
Frequency (GHz)
5
+25°C
-40°C
+85°C
T
L
-40
6
+25°C
-40°C
+85°C
0
1
2
3
4
Frequency (GHz)
5
6
|
S
|
vs. Frequency
12
|
S
|
vs. Frequency
22
-10
-15
|S
12
| (dB)
V
D
= 4.9 v, I
D
= 80 mA
0
V
D
= 4.9 v, I
D
= 80 mA
-10
|S
22
| (dB)
+25°C
-40°C
+85°C
-20
-25
-20
-30
T
L
-30
0
1
2
3
4
Frequency (GHz)
5
T
L
-40
+25°C
-40°C
+85°C
6
0
1
2
3
4
Frequency (GHz)
5
6
95
90
V
D
vs. I
D
over Temperature for fixed
V
S
= 8 V, R
BIAS
= 39 ohms *
V
D
vs. Temperature for Constant I
D
= 80 mA
5.5
5.3
V
D
(Volts)
5.1
4.9
4.7
4.5
+85°C
85
I
D
(mA)
80
75
-40°C
+25°C
70
65
4.5
4.7
4.9
V
D
(Volts)
5.1
5.3
-40
-15
10
35
Temperature(°C)
60
85
* Note: In the applications circuit on page 4, R
BIAS
compensates for voltage and current variation over
temperature.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100620 Rev. G
SGA-6389 DC-4500 MHz Cascadable MMIC Amplifier
Preliminary
Basic Application Circuit
R
BIAS
V
S
1 uF
1000
pF
Application Circuit Element
Values
Frequency (Mhz)
Reference
Designator
500
850
1950
2400
3500
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
1
4
SGA-6389
3
C
B
RF out
2
Recommended Bias Resistor Values for I
D
=80mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
6V
13
8V
39
10 V
62
12 V
91
V
S
R
BIAS
A63
Note: R
BIAS
provides DC bias stability over temperature.
1 uF
1000 pF
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
L
C
C
D
C
B
C
B
Part Identification Marking
4
4
Pin #
1
Function
RF IN
Description
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. For optimum RF
performance, use via holes as close to
ground leads as possible to reduce lead
inductance.
A63
2
3
A63Z
2
2, 4
GND
1
2
3
1
2
1
1
3
3
3
RF OUT/ RF output and bias pin. DC voltage is
BIAS
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
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Embedded System
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