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PR1506

Description
1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size160KB,2 Pages
ManufacturerETC
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PR1506 Overview

1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15

SIYU
R
塑封快恢复整流二极管
反向电压
50 --- 1000 V
正向电流
1.5 A
DO-15
PR1501 ...... PR1507
Plastic Fast Recover Rectifier
Reverse Voltage 50 to 1000V
Forward Current 1.5A
特征
Features
·½的反向漏电流
Low reverse leakage
.034(0.9)
DIA
.028(0.7)
1.0(25.4)
MIN
·较强的正向浪涌承受½力
High forward surge capability
.300(7.6)
.230(5.8)
.140(3.6)
DIA
1.0(25.4)
MIN
.104(2.6)
·高温焊接保证
High temperature soldering guaranteed:
250℃/10
秒,
0.375" (9.5mm)引线长度。
250℃/10 seconds, 0.375" (9.5mm) lead length,
·引线可承受5 磅
(2.3kg)
拉力。
5 lbs. (2.3kg) tension
机械数据
Mechanical Data
·端子: 镀锡½向引线
Terminals: Plated axial leads
·极性: 色环端为负极
Polarity: Color band denotes cathode end
·安装½½: 任意
Mounting Position: Any
Unit:inch(mm)
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Ratings at 25℃ ambient temperature unless otherwise specified.
PR15
Symbols
01/S
PR15
02/S
100
70
100
PR15
03/S
200
140
200
PR15
04/S
400
280
400
1.5
50
30
45
PR15
05/S
600
420
600
PR15
06/S
800
560
800
PR15
07/S
1000
700
1000
单½
Unit
V
V
V
A
A
µA
℃/W
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
V
RRM
50
35
50
最大均方根电压
Maximum RMS voltage
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
R
θJA
Tj, TSTG
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
@TA = 75℃
Maximum peak reverse current full cycle
最大反向峰值电流
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-50 --- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
最大正向电压
Maximum forward voltage
PR15
Symbols
01/S
I
F
= 1.5A
TA= 25℃
TA=100℃
I
F
=0.5A I
R
=1.0A I
RR
=0.25A
PR15
02/S
PR15
03/S
PR15
04/S
1.2
5.0
100
PR15
05/S
PR15
06/S
PR15
07/S
单½
Unit
V
µA
V
F
I
R
trr
C
j
150
20
最大反向电流
Maximum reverse current
最大反向恢复时间
MAX. Reverse Recovery Time
300
15
nS
pF
典型结电容
Type junction capacitance
V
R
= 4.0V, f = 1MHz
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