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PR1506GS

Description
1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size61KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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PR1506GS Overview

1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-41

PR1501G/S - PR1507G/S
1.5A FAST RECOVERY GLASS PASSIVATED RECTIFIER
Features
·
·
·
·
·
·
·
Glass Passivated Die Construction
Diffused Junction
Fast Switching for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 50A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
A
B
A
D
DO-41
DO-15
Min
25.40
5.50
0.686
2.60
Max
¾
7.62
0.889
3.60
¾
5.21
0.864
2.72
C
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
DO-41 Weight: 0.35 grams (approx.)
DO-15 Weight: 0.40 grams (approx.)
Dim
A
B
C
D
Min
25.40
4.06
0.71
2.00
Max
All Dimensions in mm
“GS” Suffix Designates DO-41 Package
“G” Suffix Designates DO-15 Package
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
A
= 55°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
@ I
F
= 1.5A
@ T
A
= 25°C
@ T
A
= 100°C
@ T
A
= 25°C unless otherwise specified
Symbol PR1501 PR1502 PR1503 PR1504 PR1505 PR1506 PR1507 Unit
G/GS
G/GS G/GS G/GS G/GS G/GS G/GS
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
R
qJA
T
j,
T
STG
150
25
65
-65 to +150
50
35
100
70
200
140
400
280
1.5
50
1.3
5.0
200
250
500
600
420
800
560
1000
700
V
V
A
A
V
mA
ns
pF
K/W
°C
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.2 5A. See figure 5.
DS27004 Rev. B-2
1 of 2
PR1501G/S - PR1507G/S

PR1506GS Related Products

PR1506GS PR1507GS PR1505GS PR1503GS PR1504GS PR1502GS PR1501GS
Description 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-41
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