VISHAY
CG2 / DG2
Vishay Semiconductors
Standard Sinterglass Diode
Features
• Specially designed for clamping circuits, horizon-
tal deflection systems and damper applications
• High temperature metallurgically bonded con-
struction
• Cavity-free glass passivated junction
• 2.0 ampere operation at T
amb
= 50 °C with no ther-
mal runaway
• Hermetically sealed package
17031
Mechanical Data
Case:
DO-204AP Sintered glass case
Terminals:
Solder plated axial leads, solderable per
MILSTD- 750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 560 mg
Parts Table
Part
CG2
DG2
Type differentiation
V
RRM
= 1400 V
V
RRM
= 1500 V
DO-204AP(G-1)
DO-204AP(G-1)
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Maximum average forward
rectified current
Peak forward surge current
Test condition
see electrical characteristics
Part
CG2
DG2
0.375 " (9.5 mm) lead length at
T
amb
= 50 °C
8.3 ms single half sine wave
superimposed on rated load
(JEDEC Method)
0.375 " (9.5 mm) lead length at
T
amb
=100 °C
Symbol
V
R
= V
RRM
V
R
= V
RRM
I
F(AV)
I
FSM
Value
1400
1500
2.0
40
Unit
V
V
A
A
Maximum full load reverse
current full cycle average
Operating junction and storage
temperature range
I
R(AV)
T
J
, T
STG
200
- 55 to + 175
µA
°C
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Typical thermal resistance
1)
1)
Test condition
Symbol
R
θJA
Value
55
Unit
K/W
Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted
Document Number 86082
Rev. 1.3, 11-Aug-04
www.vishay.com
1
CG2 / DG2
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Maximum instantaneous
forward voltage
Maximum reverse current
Test condition
I
F
= 2.0 A
V
R
= V
RRM
, T
amb
= 25 °C
V
R
= V
RRM
, T
amb
= 100 °C
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 50 mA
I
F
= 0.5 A, I
R
= 1.0 A, I
r
= 0.25 A
Typical junction capacitance
V
R
= 4.0 V, f = 1 MHz
CG2
DG2
CG2
DG2
Part
Symbol
V
F
I
R
I
R
t
rr
t
rr
t
rr
t
rr
C
j
1.0
1.0
15
Min
Typ.
VISHAY
Max
1.1
5.0
100
15
20
1.5
1.5
Unit
V
µA
µA
µs
µs
µs
µs
pF
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
Average Forward Rectified Current (A)
Resistive or
Inductive Load
1.5
Instantaneous Forward Current (A)
2.0
10
T
J
= 150°C
1
0.375" (9.5mm)
Lead Length
1.0
Ipk/I
AV
=
π
T
J
= 25°C
0.1
0.5
Capacitance Load
Ipk/I
AV
= 5.0
10
20
0
25
50
75
100
125
150
175
Pulse Width = 300µs
1% Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
gcg2_01
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
gcg2_03
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
50
Peak Forward Surge Current (A)
8.3ms Single Half Sine-Wave
(JEDEC Method)
40
Instantaneous Reverse Current (µA)
10
T
J
= 25°C
No Load Condition
30
T
J
= 125°C
1
20
T
J
= T
Jmax.
10
0.1
0
1
gcg2_02
0.01
0
20
40
T
J
= 25°C
60
80
100
Number of Cycles at 60 Hz
10
100
gcg2_04
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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2
Document Number 86082
Rev. 1.3, 11-Aug-04
VISHAY
CG2 / DG2
Vishay Semiconductors
30
Junction Capacitance (pF)
T
J
= 25°C
f = 1.0 MHz
Vsig = 50mVp-p
10
1
1
gcg2_05
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
Package Dimensions in mm (Inches)
0.86 (0.034)
0.71 (0.028)
DIA.
25.4 (1.0)
MIN.
6.1 (0.240)
MAX.
3.8 (0.150)
2.5 (0.100)
DIA.
25.4 (1.0)
MIN.
17030
Document Number 86082
Rev. 1.3, 11-Aug-04
www.vishay.com
3
CG2 / DG2
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 86082
Rev. 1.3, 11-Aug-04
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