PPC INC.
7516 Central Industrial Drive
Riviera Beach, FL 33404
PH: 561-842-0305
Fax: 561-845-7813
PPNGZ52F120A
PPNHZ52F120A
Features
•
•
•
•
•
•
•
•
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: PPNH(G)Z52F120B
high frequency IGBT, low switching losses
anti-parallel FREDiode (PPNHZ52F120A only)
TO-258
1200 Volts
52 Amps
3.2 Volts vce(sat)
N-CHANNEL
INSULATED GATE BIPOLAR
TRANSISTOR
Maximum Ratings @ 25° C (unless otherwise specified)
°
DESCRIPTION
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ T
J
≥
25°C
SYMBOL
BV
CES
BV
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM(25)
I
CM(90)
E
AS
I
C(sc)
I
C(sc)RBSOA
P
D
T
j
T
stg
I
S
I
SM
θ
JC
MAX.
1200
1200
+/-20
+/-30
52
33
104
66
65
260
66
300
-55 to +150
-55 to +150
50
100
0.42
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
mJ
A
A
Watts
°C
°C
Amps
Amps
°C/W
Collector-to-Gate Breakdown Voltage
@ T
J
≥
25°C, R
GS
= 1 MΩ
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
Tj= 25°C
Tj= 90°C
Peak Collector Current (pulse width limited by T
jmax
,)
Tj= 25°C
Tj= 90°C
Avalanche energy (single pulse)
@ I
C
= 25A, V
CC
= 50V, L= 200µH,
Short circuit current (SOA) ,
Short circuit (reverse) current (RBSOA) ,
V
CE
≤
1200V, T
J
= 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, PPNHZ52F120A only)
Pulse Source Current (Body Diode, PPNHZ52F120A only)
Thermal Resistance, Junction to Case
R
G
= 25Ω, Tj= 25°C
V
CE
≤
1200V, T
J
= 150°C, t
sc
≤
10µs
Datasheet# MSC1376.PDF
PPC INC.
PPNGZ52F120A
PPNHZ52F120A
Electrical Parameters @ 25° C (unless otherwise specified)
°
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
Collector-to-Emitter Saturation Voltage (1)
SYMBOL
BV
CES
V
GE(th)
I
GES
I
CES
V
CE(sat)
CONDITIONS
V
GS
= 0 V, I
C
= 250
µA
V
CE
= V
GE
, I
C
= 350
µA
V
GE
=
±
20V
DC
, V
CE
= 0
V
CE
=0.8•BV
CES
V
GE
= 0 V
V
GE
= 15V, I
C
= 25A
I
C
= 25A
I
C
= 60A
I
C
= 30A
V
CE
= 20 V; I
C
= 25 A
MIN
1200
4.5
TYP.
5.5
MAX
6.5
±100
±200
250
1000
3.2
3.9
UNIT
V
V
nA
µA
V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
8.5
2.7
3.3
3.4
4.3
20
1650
250
110
75
65
3.6
420
45
2.4
95
90
10
420
45
4.2
160
20
75
2.4
2
60
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 125° C
°
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125° C
°
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Antiparallel diode forward voltage (PPNHZ52F120A
only)
Antiparallel diode reverse recovery time
(PPNHZ52F120A only)
Antiparallel diode reverse recovery charge
(PPNHZ52F120A only)
Antiparallel diode peak recovery current
(PPNHZ52F120A only)
g
fs
C
ies
C
oes
C
res
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
Q
g
Q
ge
Q
gc
V
F
t
rr
Q
rr
I
RM
S
2200
380
160
110
100
560
60
pF
V
GE
= 0 V, V
CE
= 25 V, f = 1 MHz
V
GE
= 15 V, V
CE
= 600 V,
I
C
= 25 A, R
G
= 47
Ω,
L= 100
µH
note 2, 3
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
nC
V
GE
= 15 V, V
CE
= 600 V,
I
C
= 50 A, R
G
= 47
Ω,
L= 100
µH
note 2, 3
V
GE
= 15 V, V
CE
= 600V, I
C
= 25A
I
E
= 10 A
T
J
= 25
°C
I
E
= 10 A
T
J
= 100
°C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25°C
I
E
= 10 A, dI
E
/dt= 800 A/us, T
J
= 125°C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25°C
I
E
= 10 A, dI
E
/dt= 800 A/us, T
J
= 125°C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25°C
I
E
= 10 A, dI
E
/dt= 800 A/us, T
J
= 125°C
3
TBD
TBD
800
TBD
22
V
V
ns
ns
nC
nC
A
A
Notes
(1)
(2)
(3)
(4)
Pulse test, t
≤
300
µ
s, duty cycle
δ ≤
2%
switching times and losses may increase for larger V
CE
and/or R
G
values or higher junction temperatures.
switching losses include “tail” losses
Microsemi Corp. does not manufacture the igbt die; contact company for details.
Datasheet# MSC1376.PDF
stm32/stm8
京公网安备 11010802033920号
EEWORLD
