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BUT11

Description
silicon diffused power transistors
CategoryDiscrete semiconductor    The transistor   
File Size97KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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silicon diffused power transistors

BUT11 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Other featuresFORMED LEAD OPTIONS ARE AVAILABLE
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment100 W
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)4800 ns
Maximum opening time (tons)1000 ns
VCEsat-Max1.5 V
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT11; BUT11A
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13

BUT11 Related Products

BUT11 BUT11A
Description silicon diffused power transistors silicon diffused power transistors
Is it Rohs certified? conform to conform to
Parts packaging code TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
Other features FORMED LEAD OPTIONS ARE AVAILABLE FORMED LEAD OPTIONS ARE AVAILABLE
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 5 A 5 A
Collector-emitter maximum voltage 400 V 450 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 10
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Maximum power consumption environment 100 W 100 W
Maximum power dissipation(Abs) 100 W 100 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 4800 ns 4800 ns
Maximum opening time (tons) 1000 ns 1000 ns
VCEsat-Max 1.5 V 1.5 V
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