DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD135; BD137; BD139
NPN power transistors
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12
Philips Semiconductors
Product specification
NPN power transistors
FEATURES
•
High current (max. 1.5 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complements: BD136, BD138 and BD140.
handbook, halfpage
BD135; BD137; BD139
PINNING
PIN
1
2
3
emitter
collector, connected to metal part of
mounting surface
base
DESCRIPTION
2
3
1
1
2
3
Top view
MAM254
Fig.1
Simplified outline (TO-126; SOT32) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BD135
BD137
BD139
V
CEO
collector-emitter voltage
BD135
BD137
BD139
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
mb
≤
70
°C
open collector
open base
−
−
−
−
−
−
−
−
−65
−
−65
45
60
80
5
1.5
2
1
8
+150
150
+150
V
V
V
V
A
A
A
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−
45
60
100
V
V
V
MIN.
MAX.
UNIT
1999 Apr 12
2
Philips Semiconductors
Product specification
NPN power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
BD135; BD137; BD139
CONDITIONS
note 1
VALUE
100
10
UNIT
K/W
K/W
MIN.
−
−
−
40
63
25
63
100
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
190
1.3
MAX.
100
10
100
−
250
−
160
250
0.5
1
−
1.6
UNIT
nA
µA
nA
I
E
= 0; V
CB
= 30 V; T
j
= 125
°C
I
C
= 0; V
EB
= 5 V
V
CE
= 2 V; (see Fig.2)
I
C
= 5 mA
I
C
= 150 mA
I
C
= 500 mA
DC current gain
I
C
= 150 mA; V
CE
= 2 V;
BD135-10; BD137-10; BD139-10 (see Fig.2)
I
C
= 500 mA; I
B
= 50 mA
I
C
= 500 mA; V
CE
= 2 V
I
C
= 50 mA; V
CE
= 5 V;
f = 100 MHz
I
C
= 150 mA;
V
CE
= 2 V
BD135-16; BD137-16; BD139-16
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
V
V
MHz
1999 Apr 12
3
Philips Semiconductors
Product specification
NPN power transistors
BD135; BD137; BD139
handbook, full pagewidth
160
MBH729
hFE
120
VCE = 2 V
80
40
0
10
−1
1
10
10
2
IC (mA)
10
3
Fig.2 DC current gain; typical values.
1999 Apr 12
4
Philips Semiconductors
Product specification
NPN power transistors
PACKAGE OUTLINE
BD135; BD137; BD139
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P1
P
D
L1
L
1
bp
2
w
M
3
c
Q
e
e1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
2.7
2.3
b
p
0.88
0.65
c
0.60
0.45
D
11.1
10.5
E
7.8
7.2
e
4.58
e1
2.29
L
16.5
15.3
L1
(1)
max
2.54
Q
1.5
0.9
P
3.2
3.0
P1
3.9
3.6
w
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT32
REFERENCES
IEC
JEDEC
TO-126
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-03-04
1999 Apr 12
5
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