BUK9506-55A; BUK9606-55A;
BUK9E06-55A
TrenchMOS™ logic level FET
Rev. 03 — 23 July 2001
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404
(D
2
-PAK);
BUK9E06-55A in SOT226 (I
2
-PAK).
2. Features
s
s
s
s
TrenchMOS™ technology
Q101 compliant
175
°C
rated
Logic level compatible.
3. Applications
c
c
s
Automotive and general purpose power switching:
x
12 V and 24 V loads
x
Motors, lamps and solenoids.
4. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Description
gate (g)
mb
mb
mb
Simplified outline
Symbol
drain (d)
source (s)
mounting base,
connected to
drain (d)
1
MBK106
d
g
2
MBB076
s
3
MBK116
1 2 3
MBK112
1 2 3
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
SOT226 (I
2
-PAK)
Philips Semiconductors
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
5. Quick reference data
Table 2:
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Conditions
T
mb
= 25
°C;
V
GS
= 5 V
T
mb
= 25
°C
T
j
= 25
°C;
V
GS
= 5 V; I
D
= 25 A
T
j
= 25
°C;
V
GS
= 4.5 V; I
D
= 25 A
T
j
= 25
°C;
V
GS
= 10 V; I
D
= 25 A
[1]
Symbol Parameter
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Typ
−
−
−
−
5.3
5.5
4.8
Max
55
154
300
175
6.3
6.7
5.8
Unit
V
A
W
°C
m
Ω
m
Ω
m
Ω
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T
mb
= 25
°C;
V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 5 V;
Figure 2
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
W
DSS
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 75 A;
V
DS
≤
55 V; V
GS
= 5 V; R
GS
= 50
Ω;
starting T
mb
= 25
°C
[1]
[2]
[1]
[2]
[2]
Conditions
R
GS
= 20 kΩ
Min
−
−
−
−
−
−
−
−
−55
−55
−
−
−
−
Max
55
55
±15
154
75
75
616
300
+175
+175
154
75
616
1.1
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
mb
= 25
°C;
Figure 1
Source-drain diode
Avalanche ruggedness
[1]
[2]
Current is limited by power dissipation chip rating
Continuous current is limited by package
9397 750 08416
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 — 23 July 2001
2 of 16
Philips Semiconductors
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
03na19
120
Pder
(%)
100
ID 180
(A)
160
140
03ne93
80
120
100
60
80
40
60
40
Capped at 75A due to package
20
20
0
0
25
50
75
100
125
150
175 200
Tmb (oC)
0
25
50
75
100
125
150
175
200
Tj (ºC)
P
tot
P
der
=
----------------------
×
100%
P
°
tot
(
25 C
)
V
GS
≥
4.5 V
I
D
I
der
=
------------------
×
100%
-
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
RDSon = VDS / ID
03nf02
tp = 10 us
102
Capped at 75 A due to package
1 ms
D.C.
10
P
100 us
δ
=
tp
T
10 ms
100 ms
tp
T
t
1
1
10
VDS (V)
102
T
mb
= 25
°C;
I
DM
single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08416
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 — 23 July 2001
3 of 16
Philips Semiconductors
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
7. Thermal characteristics
Table 4:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
vertical in still air; SOT78 and
SOT226 packages
mounted on printed circuit board;
minimum footprint; SOT404
package
R
th(j-mb)
thermal resistance from junction to mounting
base
Figure 4
Value
60
50
Unit
K/W
K/W
0.5
K/W
7.1 Transient thermal impedance
1
Zth(j-mb)
(K/W)
δ
= 0.5
10-1
03nf03
0.2
0.1
0.05
0.02
P
10-2
δ
=
tp
T
Single Shot
tp
t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08416
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 — 23 July 2001
4 of 16
Philips Semiconductors
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
8. Characteristics
Table 5: Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol
V
(BR)DSS
Parameter
drain-source breakdown
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
V
GS
=
±10
V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°C
T
j
= 175
°C
V
GS
= 4.5 V; I
D
= 25 A
V
GS
= 10 V; I
D
= 25 A
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
d
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404 / SOT226
L
s
internal source inductance
from source lead to source
bond pad
V
DD
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V; R
G
= 10
Ω
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
−
−
−
−
−
−
−
−
−
6500
1000
650
45
180
420
235
4.5
3.5
8600
1200
850
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
nH
nH
−
−
−
−
5.3
−
−
4.8
6.3
13.2
6.7
5.8
mΩ
mΩ
mΩ
mΩ
−
−
−
0.05
−
2
10
500
100
µA
µA
nA
1
0.5
−
1.5
−
−
2
−
2.3
V
V
V
55
50
−
−
−
−
V
V
Min
Typ
Max
Unit
Static characteristics
−
2.5
−
nH
−
7.5
−
nH
9397 750 08416
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 03 — 23 July 2001
5 of 16
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