PIN Photodiodes
PNZ313B
PIN Photodiode
Unit : mm
For optical control systems
8.0±0.5
5.0
7.0±0.5
Anode mark ø1.6
Device
center
Features
Fast response which is well suited to high speed modulated light
detection : t
r
, t
f
= 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes :
λ
P
= 960 nm (typ.)
Wide detection area, wide acceptance half angle :
θ
= 65 deg. (typ.)
Adoption of visible light cutoff resin
13 min.
2.3±0.3
2-1.2±0.15
2-0.6±0.15
0.41±0.15
2
1
5.08±0.25
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
100
–30 to +85
– 40 to +100
Unit
V
mW
˚C
˚C
2.8±0.3
1: Cathode
2: Anode
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Photo current
Peak sensitivity wavelength
Response time
Response time
Capacitance between pins
Acceptance half angle
*1
Symbol
I
D
I
L
λ
P
t
r
, t
f*2
t
r
, t
f*2
C
t
θ
V
R
= 10V
Conditions
V
R
= 10V, L = 1000 lx
*1
V
R
= 10V
V
R
= 10V, R
L
= 1kΩ
V
R
= 10V, R
L
= 100kΩ
V
R
= 0V, f = 1MHz
Measured from the optical axis to the half power point
min
15
typ
5
25
960
50
5
70
65
max
50
Unit
nA
µA
nm
ns
µs
pF
deg.
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
λ
P
= 800nm
50Ω
R
L
V
R
= 10V
(Input pulse)
Sig.OUT
(Output pulse)
t
d
t
r
t
f
90%
10%
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
,,,
,
,,,
,
1
PIN Photodiodes
PNZ313B
P
D
— Ta
120
10
3
V
R
= 10V
Ta = 25˚C
T = 2856K
I
L
— L
10
3
V
R
= 10V
I
D
— Ta
100
P
D
(mW)
I
L
(µA)
80
Power dissipation
Photo current
60
40
1
Dark current
10
2
10
3
10
4
10
I
D
(nA)
10
2
10
2
10
1
20
0
– 30
0
20
40
60
80
100
10
–1
10
10
–1
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Illuminance L (lx)
Ambient temperature Ta (˚C )
I
L
— Ta
160
140
V
R
= 10V
L = 1000 lx
T = 2856K
100
Spectral sensitivity characteristics
V
R
= 10V
Ta = 25˚C
100
Directional characteristics
Ta = 25˚C
I
L
(%)
S (%)
120
100
80
60
40
20
0
– 40 – 20
Relative photo current
Relative sensitivity
40
Relative sensitivity
700
800
900
1000 1100 1200
60
S (%)
80
80
60
40
20
20
0
20
40
60
80
100
0
600
0
80
40
0
40
80
Ambient temperature Ta (˚C )
Wavelength
λ
(nm)
Angle
θ
(deg.)
C
t
— V
R
100
10
2
Sig.IN
t
r
, t
f
— R
L
10
V
R
= 10V
Sig.
OUT
R
L
90%
10%
2
I
D
— V
R
C
t
(pF)
,,
10
50Ω
80
t
r
, t
f
(µs)
I
D
(nA)
Dark current
10
2
t
r
t
d
t
f
Capacitance between pins
10
60
Rise time, Fall time
1
40
1
10
–1
20
0
10
–2
10
–1
1
10
10
2
10
–2
10
–1
1
10
10
–1
0
8
16
24
32
40
48
Reverse voltage V
R
(V)
External load resistance R
L
(kΩ)
Reverse voltage V
R
(V)
2
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