PIN Photodiodes
PNZ3112
PIN Photodiode
Unit : mm
For optical control systems
1.0±0.1
5.0±0.1
2.54±0.1
4
3
1.8±0.3
0.8±0.2
0.6±0.1
Features
High sensitivity and low dark current
For one-dimensional light-point position detection
Good positional linearity
Small plastic package
Adoption of visible light cutoff resin
13.5±1.0
4.0±0.1
1.0±0.3
1.0±0.3
4-0.6
+0.1
–0.2
1.0±0.1
4-0.5±0.15
1
10˚
5˚
5˚
0.2
+0.1
–0.05
2
10˚
5˚
5˚
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
30
–25 to +85
–30 to +100
Unit
V
mW
˚C
1.3
1.0
1: Anode A1
2: Common cathode
3: Anode A2
4: Common cathode
Dimensions of detection area
3.0
2.5
Unit : mm
˚C
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Resistance between electrodes
Gradient of position signal
*1
I
L
Symbol
I
D
I
L
λ
P
t
r
, t
f
*2
Conditions
V
R
= 1V
V
R
= 1V, L = 1000 lx
*1
V
R
= 1V
V
R
= 1V, R
L
= 1kΩ
V
R
= 1V, f = 1MHz
V
R
= 1V, V
a
= 0.5V
V
R
= 1V
min
16
typ
20
940
10
10
120
0.08
max
2
Unit
nA
µA
nm
µs
pF
kΩ
C
t
R
S*3
a
*4
= I
1
+ I
2
Note: I
1
and I
2
are the photoelectric currents of anodes A1 and A2.
White tungsten lamp light source (color temperature T = 2856K)
*2
GaAs light emitting diode light source (
λ
= 800nm)
*3
V is the potential difference between anodes A1 and A2.
a
*4
a = | (I –I )/(I +I ) |
1 2
1 2
Note :Incident light is at the position 100
µm
from the reference position.
The reference position is the position where I
1
= I
2.
1
PNZ3112
PIN Photodiodes
P
D
— Ta
40
10
3
V
R
= 1V
Ta = 25˚C
T = 2856K
I
L
— L
160
140
I
L
— Ta
V
R
= 1V
L = 1000 lx
T = 2856K
P
D
(mW)
I
L
(µA)
30
10
2
I
L
(%)
Relative photo current
10
3
10
4
10
5
120
100
80
60
40
20
Power dissipation
Photo current
20
10
10
1
0
– 30
0
20
40
60
80
100
10
–1
10
2
0
– 40 – 20
0
20
40
60
80
100
Ambient temperature
Ta (˚C )
Illuminance
L (lx)
Ambient temperature Ta (˚C )
I
D
— V
R
240
Ta = 25˚C
200
10
10
2
V
R
= 1V
I
D
— Ta
100
Spectral sensitivity characteristics
V
R
= 1V
Ta = 25˚C
I
D
(pA)
I
D
(nA)
160
1
S (%)
Relative sensitivity
0
20
40
60
80
100
80
60
Dark current
Dark current
120
10
–1
40
80
10
–2
40
10
–3
20
0
0
8
16
24
32
10
–4
– 40 – 20
0
600
700
800
900
1000 1100 1200
Reverse voltage
V
R
(V)
Ambient temperature
Ta (˚C )
Wavelength
λ
(nm)
R
S
— Ta
320
10
3
C
t
— V
R
t
r
, t
f
— R
L
Sig.IN
V
a
Sig.
OUT
R
L
90%
10%
Resistance between electrodes R
S
(kΩ)
C
t
(pF)
Rise time, Fall time t
r
, t
f
(µs)
240
10
2
50Ω
t
r
t
d
t
f
Capacitance between pins
160
10
80
1
,
10
3
10
2
V
R
= 1V
10
1
Ta = 25˚C
10
–1
1
10
10
2
10
3
10
–1
10
–2
0
– 40 – 20
0
20
40
60
80
100
10
–1
10
–1
1
10
10
2
Ambient temperature
Ta (˚C )
Reverse voltage
V
R
(V)
External load resistance R
L
(kΩ)
2
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