PIN Photodiodes
PNZ312D
Dual Division Silicon PIN Photodiode
Unit : mm
For optical information systems
Features
Fast response : t
r
, t
f
= 10 ns (typ.)
13.5±1.0
4.0±0.1
1.0±0.3
1.0±0.1
Good photo current linearity
Low dark current : I
D
= 20 nA (max.)
Small size plastic package (flat type)
Adoption of visible light cutoff resin
A
B
4-0.6
+0.1
–0.2
4-0.5±0.1
1
10˚
1.0
1.0
10˚
ø3.2 Dep. 0.1(typ.)
10˚
5.0±0.1
2.54±0.1
4
3
1.8±0.3
1.0±0.2
0.2
+0.1
–0.05
2
10˚
0.2
0.6
Applications
Auto focus sensor for still cameras and video cameras etc.
Distance measuring systems
Position sensor for automatic assembly lines
Eye sensor for industrial robots
5˚
5˚
1: Anode A
2: Common Cathode
3: Anode B
4: Common Cathode
Note) The PNZ312D package consists of a visible
light cutoff resin. Therefore the chips (A and B)
shown in the drawing cannot actually be seen.
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
30
–25 to +85
–30 to +100
Unit
V
mW
˚C
˚C
Dimensions of detection area
3.5
1.6
1.6
0.04
Unit : mm
1.35
1.0
A
B
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Acceptance half angle
Symbol
V
R
I
D
I
L*3
λ
P
t
r
, t
f*2
C
t
θ
I
R
= 10µA
V
R
= 10V
V
R
= 10V, L = 1000 lx
*1
V
R
= 10V
V
R
= 10V, R
L
= 1kΩ
V
R
= 10V, f = 1MHz
Measured from the optical axis to the half power point
8
12
940
10
5
65
Conditions
min
30
20
typ
max
Unit
V
nA
µA
nm
ns
pF
deg.
Note) The indicated values for absolute maximum ratings and electro-optical characteristics are the values
corresponding to individual elements.
Measurements were made using a white tungsten lamp (color temperature T = 2856K) as a light source.
*2
Semiconductor laser light source (
λ
= 800 nm )
*3
Photo current measurement circuit
*1
+10V
R
1
= R
2
R
1
R
2
,
,
,
,,
1
PNZ312D
PIN Photodiodes
P
D
— Ta
40
10
3
V
R
=
10V
Ta
=
25˚C
T
=
2856K
I
L
— L
160
140
I
L
— Ta
V
R
=
10V
L
=
1000 lx
T
=
2856K
P
D
(mW)
I
L
(µA)
30
10
2
I
L
(%)
Relative photo current
10
2
10
3
10
4
120
100
80
60
40
20
Power dissipation
Photo current
20
10
10
1
0
– 25
0
20
40
60
80
100
10
–1
10
0
– 40 – 20
0
20
40
60
80
100
Ambient temperature
Ta (˚C )
Illuminance
L (lx)
Ambient temperature Ta (˚C )
I
D
— V
R
1
Ta
=
25˚C
10
V
R
=
10V
I
D
— Ta
100
Spectral sensitivity characteristics
V
R
=
10V
Ta
=
25˚C
I
D
(nA)
I
D
(nA)
1
S (%)
Relative sensitivity
0
20
40
60
80
100
80
60
Dark current
10
–1
Dark current
40
10
–1
20
10
–2
0
4
8
12
16
20
24
28
32
10
–2
– 40 – 20
0
200
400
600
800
1000
1200
Reverse voltage
V
R
(V)
Ambient temperature
Ta (˚C )
Wavelength
λ
(nm)
Directivity characteristics
100
10
3
C
t
— V
R
f
=
1MHz
Ta
=
25˚C
10
4
Sig.IN
t
r
, t
f
— R
L
V
R
=10V
Sig.
OUT
R
L
90%
10%
C
t
(pF)
Relative sensitivity S (%)
80
Rise time, Fall time t
r
, t
f
(ns)
,,
,
10
3
50Ω
10
2
10
1
10
10
2
1
10
–1
1
10
2
t
r
t
d
t
f
60
Capacitance between pins
10
40
1
20
0
80
40
0
40
80
10
–1
10
–1
Ta
=
25˚C
10
10
2
Angle
θ
(deg.)
Reverse voltage
V
R
(V)
External load resistance R
L
(kΩ)
2
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