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PNZ150

Description
Silicon planar type For optical control systems
File Size386KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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PNZ150 Overview

Silicon planar type For optical control systems

This product complies with the RoHS Directive (EU 2002/95/EC).
Phototransistors
PNZ150
(PN150)
Silicon planar type
For optical control systems
Features
High sensitivity
Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs
Small collector-emitter cutoff current (base open)
Side-view plastic mold type package
Parameter
Symbol
V
CEO
I
C
P
C
Collector-emitter voltage (Base open)
Collector current
Collector power dissipation
Storage temperature
Operating ambient temperature
T
opr
T
stg
Electrical-Optical Characteristics
T
a
= 25°C±3°C
Parameter
Symbol
I
L
I
CEO
λ
PD
θ
t
r
Photocurrent
*1
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Rating
20
20
Unit
V
mA
°C
°C
100
mW
–25 to +85
–30 to +100
Conditions
Min
1.0
Typ
3.0
0.2
Max
1.0
0.5
V
CE
= 10 V, L = 500 lx
V
CE
= 10 V
V
CE
= 10 V
0.01
800
35
4
4
I
L
= 1 mA, L = 1 000 lx
The angle when the photocurrent is
halved
V
CC
= 10 V, I
L
= 5 mA, R
L
= 100
W
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
Collector-emitter cutoff current (Base open)
Collector-emitter saturation voltage
*1
Peak sensitivity wavelength
Half-power angle
Rise time
*2
Fall time
*2
V
CE(sat)
Unit
mA
µA
V
nm
°
µs
µs
/D
Sig. in
isc
on
4. *1:Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
V
CC
Ma
int
en
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
an
ce
tin
Pl
ue
t
f
di
(Input pulse)
90%
10%
t
r
t
f
t
r
: Rise time
t
f
:
Fall time
50
R
L
Sig. out (Output pulse)
Note) The part number in the parenthesis shows conventional part number.
Publication date: October 2008
SHE00018CED
1

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