Darlington Phototransistors
PNZ263L
Darlington Phototransistor
0.8 max.
Gate the rest
Unit : mm
3.0±0.3
ø1.1
R0.5
Not soldered
2.15 max.
For optical control systems
Features
Darlington output, high sensitivity
Small size, thin side-view type package
Adoption of visible light cutoff resin
1.95±0.25
1.4±0.2
0.9
0.5
28.0
+1.0
–0.5
14.3
0.8
1.35
3.5±0.3
1.1
2.4
1.1 0.8
2-0.8 max.
(8.9)
2.4
2-0.8 max.
0.3±0.15
2-0.5±0.15
2
1
2.54
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
30
100
–25 to +80
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
1: Collector
2: Emitter
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
*1
Symbol
I
CEO
S
IR*1
λ
P
θ
t
r
, t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, H = 3.75
µW/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
C
= 1mA, R
L
= 100Ω
I
C
= 100µA, H = 3.75
µW/cm
2
min
60
typ
0.1
200
850
25
150
0.7
max
0.5
Unit
µA
µA
nm
deg.
µs
1.5
V
Measurements were made using infrared light (λ = 940 nm) as a light source.
*2
Switching time measuring circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,
,,
50Ω
R
L
1
PNZ263L
Darlington Phototransistors
P
C
— Ta
120
32
I
CE(L)
— V
CE
10
2
Ta = 25˚C
T = 2856K
I
CE(L)
— L
I
CE(L)
(mA)
V
CE
= 10V
Ta = 25˚C
T = 2856K
P
C
(mW)
100
I
CE(L)
(mA)
P
C
= 100mW
24
10
Collector power dissipation
80
Collector photo current
Collector photo current
60
16
L =100 lx
1
40
8
50 lx
30 lx
10 lx
10
–1
20
0
– 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
10
–2
1
10
10
2
10
3
Ambient temperature
Ta (˚C )
Collector to emitter voltage
V
CE
(V)
Illuminance L (lx)
I
CE(L)
— Ta
10
V
CE
= 10V
T = 2856K
10
2
I
CEO
— Ta
V
CE
= 10V
100
Spectral sensitivity characteristics
V
CE
= 10V
Ta = 25˚C
I
CE(L)
(mA)
1
Dark current I
CEO
(µA)
10
S (%)
Relative sensitivity
0
20
40
60
80
100
80
Collector photo current
60
1
40
10
–1
10
–1
20
10
–2
– 40
0
40
80
120
10
–2
– 20
0
600
700
800
900
1000 1100 1200
Ambient temperature
Ta (˚C )
Ambient temperature
Ta (˚C )
Wavelength
λ
(nm)
Directivity characteristics
0˚
120
10˚
20˚
30˚
40˚
Sig.IN
Sig.
OUT
50Ω
t
r
— I
CE(L)
V
CC
Sig.
OUT
R
L
90%
10%
Sig.IN
Sig.
OUT
50Ω
t
f
— I
CE(L)
V
CC
Sig.
OUT
R
L
90%
10%
,,
,
80
60
40
Relative sensitivity
S (%)
50˚
60˚
70˚
80˚
90˚
Rise time t
r
(µs)
10
3
R
L
= 1kΩ
500Ω
100Ω
Fall time t
f
(µs)
,
10
3
10
2
10
10
–2
10
–1
t
r
t
d
t
f
t
r
t
d
t
f
R
L
= 1kΩ
500Ω
100Ω
10
2
10
10
–2
V
CC
= 10V
Ta = 25˚C
10
–1
1
10
V
CC
= 10V
Ta = 25˚C
1
10
Collector photo current
I
CE(L)
(mA)
Collector photo current
I
CE(L)
(mA)
2
京公网安备 11010802033920号
EEWORLD
