Phototransistors
PNZ123S
Silicon NPN Phototransistor
Unit : mm
For optical control systems
4.1±0.3
2.0±0.2
12.5 min.
ø3.0±0.2
Can be combined with LN62S to form an photo interrupter
Features
High sensitivity
Low dark current
Fast response : t
r
= 3.5
µs
(typ.)
Small size (ø 3) ceramic package
ø0.3±0.05
ø0.45±0.05
0.9±0.15
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
10
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
2
1
1: Emitter
2: Collector
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
*1
*2
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r*2
t
f*2
V
CE
= 10V
Conditions
V
CE
= 10V, L = 1000 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100Ω
min
400
typ
1
800
30
3.5
5
max
100
700
Unit
nA
µA
nm
deg.
µs
µs
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,
,,
,,
50Ω
R
L
1
Phototransistors
PNZ123S
P
C
— Ta
60
1600
I
CE(L)
— V
CE
10
4
Ta = 25˚C
T = 2856K
I
CE(L)
— L
I
CE(L)
(µA)
V
CE
= 10V
Ta = 25˚C
T = 2856K
P
C
(mW)
50
I
CE(L)
(µA)
1200
L =2000 lx
1750 lx
1500 lx
10
3
Collector power dissipation
40
Collector photo current
Collector photo current
30
800
1250 lx
1000 lx
400
750 lx
500 lx
250 lx
10
2
20
10
10
0
– 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
1
10
10
2
10
3
10
4
Ambient temperature
Ta (˚C )
Collector to emitter voltage
V
CE
(V)
Illuminance L (lx)
I
CEO
— Ta
10
3
V
CE
= 10V
10
4
I
CE(L)
— Ta
V
CE
= 10V
T = 2856K
100
Spectral sensitivity characteristics
V
CE
= 10V
Ta = 25˚C
I
CE(L)
(µA)
Dark current I
CEO
(nA)
10
2
10
Collector photo current
10
3
1000 lx
Relative sensitivity
L = 1500 lx
S (%)
10
2
– 20
0
20
40
60
80
100
80
60
40
1
20
10
–1
– 20
0
20
40
60
80
100
0
200
400
600
800
1000
1200
Ambient temperature
Ta (˚C )
Ambient temperature
Ta (˚C )
Wavelength
λ
(nm)
Directivity characteristics
0˚
100
10˚
20˚
10
3
t
r
— I
CE(L)
V
CC
= 10V
Ta = 25˚C
10
3
t
f
— I
CE(L)
V
CC
= 10V
Ta = 25˚C
80
70
60
50
40
30
20
Relative sensitivity S (%)
90
30˚
10
2
10
2
Rise time t
r
(µs)
40˚
50˚
60˚
70˚
80˚
90˚
10
Fall time t
f
(µs)
R
L
= 1kΩ
500Ω
10
R
L
= 1kΩ
500Ω
1
1
100Ω
100Ω
10
–1
10
–2
10
–1
1
10
10
–1
10
–2
10
–1
1
10
Collector photo current
I
CE(L)
(mA)
Collector photo current
I
CE(L)
(mA)
2
MCU
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