This product complies with the RoHS Directive (EU 2002/95/EC).
Phototransistors
PNZ107F
(PN107F)
, PNZ108F
(PN108F)
Silicon planar type
For optical control systems
■
Features
•
Flat window design which is suited to optical systems
•
Wide directivity characteristics for easy use
•
Fast response: t
r
=
8
µs
(typ.)
•
Signal mixing capability using base pin (PNZ108F)
•
TO-18 standard type package
PAZ107F
4.5
±0.2
φ4.6
±0.15
Glass window
Unit: mm
12.7 min.
2-φ0.45
±0.05
M
ain
Di
sc te
on na
tin nc
ue e/
d
1.
0
±
2.45
±0.25
0
±
1.
2
0.
±
45
°
0.
15
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
Collector-emitter voltage (Base open)
Collector-base voltage
(Emitter open)
Emitter-base voltage
(Collector open)
Collector current
PNZ108F
Emitter-collector voltage (Base open)
PNZ108F
Collector power dissipation
*
P
C
Operating ambient temperature
Storage temperature
T
opr
T
stg
Note) *: The rate of electric power reduction is 1.5 mW/°C above T
a
= 25°C.
tin
Parameter
*1
Symbol
I
CE(L)
I
CEO
λ
p
θ
ue
■
Electrical-Optical Characteristics
T
a
=
25°C
±
3°C
isc
on
Photocurrent
Dark current
ce
Peak emission wavelength
Half-power angle
Rise time
*2
Fall time
*2
t
r
t
f
Collector-emitter saturation voltage
*1
V
CE(sat)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be dis regarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
V
CC
(Input pulse)
Sig. out
R
L
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
:
Fall time
50
Ω
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
2
1
φ5.75
max.
1: Emitter
2: Collector
MTGFR102-001 Package
Unit: mm
3
°
Rating
20
30
3
5
Unit
V
V
V
V
PAZ108F
φ4.6
±0.15
Glass window
12.7 min.
4.5
±0.2
3−φ0.45
±0.05
2.54
±0.25
30
mA
°C
1.
0
±
2
0.
150
mW
°C
5
±
45
°
−25
to
+85
1.
0
±
0.
1
3
°
−30
to
+100
1
1: Collector
2: Base
φ5.75
max.
3: Emitter
MTGFR103-002 Package
2
3
Conditions
Min
0.4
Typ
Max
4.0
2.0
Unit
mA
µA
nm
°
V
CE
=
10 V, L
=
100 lx
V
CE
=
10 V
V
CE
=
10 V
0.05
900
40
8
9
/D
Ma
int
en
The angle from which photocurrent
becomes 50%
an
V
CC
=
10 V, I
CE(L)
=
1 mA, R
L
=
100
Ω
I
CE(L)
=
1 mA, L
=
1 000 lx
µs
µs
V
0.3
0.6
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2004
SHE00008BED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
Pl
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
51mcu
京公网安备 11010802033920号
EEWORLD
