Phototransistors
PNA1401LF, PNZ102F
Silicon NPN Phototransistors
PNA1401LF
Unit : mm
ø4.6±0.15
Glass window
For optical control systems
Features
Flat window design which is suited to optical systems
Low dark current : I
CEO
= 5 nA (typ.)
Fast response : t
r
, t
f
= 3
µs
(typ.)
Wide directional sensitivity
4.5±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
12.7 min.
2-ø0.45±0.05
2.54±0.25
Base pin for easy circuit design (PNZ102F)
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Symbol
V
CEO
V
ECO
I
C
V
CBO*
V
EBO
P
C
*
Collector to emitter voltage
Collector to base voltage
Emitter to base voltage
Collector current
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
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1.
0
±
0.
2
5
3
45
±
1.
0
±
0
.1
˚
2 1
ø5.75 max.
Ratings
30
40
5
5
Unit
V
V
1: Emitter
2: Collector
PNZ102F
Unit : mm
V
V
ø4.6±0.15
Glass window
50
mA
˚C
150
mW
˚C
4.5±0.2
12.7 min.
T
opr
T
stg
–25 to +85
Photo-
detectors
–30 to +100
3-ø0.45±0.05
ue
*
PNZ102F only
2.54±0.25
on
tin
0
0
±
1.
isc
.2
/D
15
45
±
0
±
0.
3˚
ce
1.
Ma
int
en
3
2 1
an
ø5.75 max.
1: Emitter
2: Base
3: Collector
163
PNA1401LF, PNZ102F
Phototransistors
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Collector photo current
Peak sensitivity wave length
Acceptance half angle
Response time
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r
, t
f*2
V
CE
= 10V
V
CE
= 10V, L = 100
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100Ω
L = 500 lx
*1
PNA1401LF I
CE(L)
= 0.1mA
PNZ102F I
CE(L)
= 0.1mA
lx
*1
0.1
Conditions
min
typ
5
0.3
800
40
3
0.2
0.4
max
300
Unit
nA
mA
nm
deg.
µs
V
*2
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
;;;
;
;
;
50Ω
R
L
200
an
P
C
— Ta
160
Collector power dissipation
Collector photo current
300 lx
Collector photo current
120
80
40
0
– 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
164
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90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
M
ain
Di
sc te
on na
tin nc
ue e/
d
Collector saturation voltage
V
CE(sat)
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
/D
isc
on
tin
ue
I
CE(L)
— V
CE
I
CE(L)
— L
ce
2.0
P
C
(mW)
Ma
int
en
900 lx
800 lx
700 lx
1000 lx
10
I
CE(L)
(mA)
1.6
500 lx
I
CE(L)
(mA)
600 lx
V
CE
= 10V
Ta = 25˚C
T = 2856K
1
400 lx
1.2
10
–1
0.8
200 lx
100 lx
10
–2
0.4
L = 50 lx
0
0
8
16
24
32
10
–3
1
10
10
2
10
3
Collector to emitter voltage V
CE
(V)
Illuminance L (lx)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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ain
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isc
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