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ZDT617

Description
Power Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size1MB,3 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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ZDT617 Overview

Power Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

ZDT617 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1990678170
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage15 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)150
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
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