Power Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN
| Parameter Name | Attribute value |
| Objectid | 1810804013 |
| package instruction | SMALL OUTLINE, R-PDSO-G8 |
| Contacts | 8 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 3 A |
| Collector-emitter maximum voltage | 15 V |
| Configuration | SEPARATE, 2 ELEMENTS |
| Minimum DC current gain (hFE) | 150 |
| JESD-30 code | R-PDSO-G8 |
| Number of components | 2 |
| Number of terminals | 8 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 120 MHz |
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