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PNA2W01M

Description
Darlington Phototransistor
CategoryLED optoelectronic/LED    photoelectric   
File Size385KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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PNA2W01M Overview

Darlington Phototransistor

PNA2W01M Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerPanasonic
package instructionLTTLW102-001, 2 PIN
Reach Compliance Codeunknow
Coll-Emtr Bkdn Voltage-Mi20 V
ConfigurationSINGLE
Maximum dark power500 nA
Infrared rangeYES
Nominal photocurrent3 mA
Installation featuresSURFACE MOUNT
Number of functions1
Maximum on-state current0.03 A
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Optoelectronic device typesPHOTO DARLINGTON
peak wavelength800 nm
Maximum power dissipation0.1 W
Maximum response time0.0002 s
shapeROUND
size1.8 mm
surface mountYES
This product complies with the RoHS Directive (EU 2002/95/EC).
Darlington Phototransistors
PNA2W01M
(PN207)
Silicon planar type
For optical control systems
Features
High sensitivity
Easy to combine with red and infrared light emitting diodes
Small size designed for easier mounting to printed circuit board
Collector-emitter voltage (Base open)
Emitter-collector voltage (Base open)
Collector current
Collector power dissipation
Storage temperature
V
CEO
V
ECO
I
C
P
C
Operating ambient temperature
T
opr
T
stg
Electrical-Optical Characteristics
T
a
= 25°C±3°C
Parameter
Symbol
I
L
I
CEO
λ
PD
θ
t
r
t
f
Photocurrent
*1
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20
5
30
V
V
mA
°C
°C
100
mW
–25 to +85
–30 to +100
Conditions
Min
0.5
Typ
3.0
0.1
0.7
Max
0.5
1.5
V
CE
= 10 V, L = 2 lx
V
CE
= 10 V
I
L
= 1 mA, L = 100 lx
V
CE
= 10 V
800
18
The angle when the photocurrent is
halved
V
CC
= 10 V, I
L
= 5 mA, R
L
= 100
W
200
200
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-emitter cutoff current (Base open)
Peak sensitivity wavelength
*1
Half-power angle
Rise time
*2
Collector-emitter saturation voltage
V
CE(sat)
Unit
mA
µA
V
nm
°
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4. *1:Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
Ma
int
en
an
ce
Fall time
*2
/D
isc
Sig. in
on
tin
Pl
ue
di
V
CC
λ
PD
=
800 nm
50
Sig. out
R
L
(Input pulse)
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
:
Fall time
Note) The part number in the parenthesis shows conventional part number.
Publication date: October 2008
SHE00026CED
1

PNA2W01M Related Products

PNA2W01M PN207
Description Darlington Phototransistor Darlington Phototransistor
Is it lead-free? Lead free Lead free
Maker Panasonic Panasonic
package instruction LTTLW102-001, 2 PIN LTTLW102-001, 2 PIN
Reach Compliance Code unknow unknown
Configuration SINGLE SINGLE
Maximum dark power 500 nA 500 nA
Infrared range YES YES
Nominal photocurrent 3 mA 3 mA
Number of functions 1 1
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -25 °C -25 °C
Optoelectronic device types PHOTO DARLINGTON PHOTO DARLINGTON
peak wavelength 800 nm 800 nm
shape ROUND ROUND
size 1.8 mm 1.8 mm

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