HiPerFET
TM
Power MOSFET
Type
V
DSS
max.
V
IXFD76N07-7X
IXFD180N07-9X
IXFD340N07-9Y
IXFD180N085-9X
IXFD280N085-9Y
IXFD75N10-7X
IXFD80N10Q-8X
IXFD170N10-9X
IXFD230N10-9Y
IXFD70N15-7X
IXFD150N15-9X
IXFD50N20-7X
IXFD60N20F-74
IXFD66N20Q-72
IXFD88N20Q-82
IXFD120N20-9X
IXFD180N20-9Y
IXFD40N30Q-72
IXFD40N30-7X
IXFD52N30Q-82
IXFD73N30Q-8Y
IXFD90N30-9X
IXFD130N30-9Y
70
R
DS(ON)
max.
Ω
0.015
0.007
0.005
0.007
0.005
0.026
0.018
0.011
0.007
0.032
0.013
0.049
0.042
0.044
0.035
0.020
0.014
0.095
0.090
0.075
0.050
0.040
0.028
7X
9X
9Y
9X
9Y
7X
8X
9X
9Y
7X
9X
7X
74
72
82
9X
9Y
72
7X
82
8Y
9X
9Y
Chip
type
Chip size
dimensions
mm
8.84 x 7.18
14.20 x 10.60
15.81 x 14.31
14.20 x 10.60
15.81 x 14.31
8.84 x 7.18
12.2 x 7.20
14.20 x 10.60
15.81 x 14.31
8.84 x 7.18
14.20 x 10.60
8.84 x 7.18
9.58 x 7.13
8.89 x 7.16
12.17 x 7.14
14.20 x 10.60
15.81 x 14.31
8.89 x 7.16
8.84 x 7.18
12.17 x 7.14
13.98 x 9.02
14.20 x 10.60
15.81 x 14.31
mils
348 x 283
559 x 417
623 x 563
559 x 417
623 x 563
348 x 283
480 x 283
559 x 417
623 x 563
348 x 283
559 x 417
348 x 283
377 x 281
350 x 282
479 x 281
559 x 417
623 x 563
350 x 282
348 x 283
479 x 281
550 x 355
559 x 417
623 x 563
15 mil x 3
15 mil x 6
12 mil x 12
15 mil x 6
12 mil x 12
15 mil x 3
15 mil x 4
15 mil x 6
12 mil x 12
15 mil x 3
15 mil x 6
15 mil x 3
15 mil x 3
15 mil x 3
15 mil x 4
15 mil x 6
12 mil x 12
15 mil x 3
15 mil x 3
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 12
IXFH76N07
IXFK180N07
IXFN340N07
IXFK180N085
IXFN280N085
IXFH75N10
IXFH80N10Q
IXFK170N10
IXFN230N10
IXFH70N15
IXFK150N15
IXFH50N20
IXFH60N20F
IXFH66N20Q
IXFH88N20Q
IXFK120N20
IXFN180N20
IXFH40N30Q
IXFH40N30
IXFH52N30Q
IXFK73N30Q
IXFK90N30
IXFN130N30
Source -
bond wire
recommended
Equivalent
device
data sheet
HiPerFET
TM
Power MOSFETs
The
High Performance
MOSFET family of Power
MOSFETs is designed to provide superior dv/dt
performance while eliminating the need for discrete,
fast recovery "free wheeling diodes" in a broad range of
power switching applications.
This class of Power MOSFET uses IXYS' HDMOS
process, which improves the ruggedness of the MOSFET
while reducing the reverse recovery time of the fast
intrinsic diode to 250 ns or less at elevated (150°C)
junction temperature. The performance of the fast
intrinsic diode is comparable to discrete high voltage
diodes and is tailored to minimize power dissipation
and stress in the MOSFET.
85
100
150
200
300
This table reflects only new designed chips. Please contact factory for older designs.
© 2004 IXYS All rights reserved
8
HiPerFET
TM
Power MOSFET
Type
V
DSS
max.
V
IXFD13N50F-5F
IXFD21N50F-7F
IXFD24N50-7X
IXFD26N50Q-72
IXFD28N50F-74
IXFD32N50-8X
IXFD40N50Q-82
IXFD40N50Q2-84
IXFD44N50F-8F
IXFD48N50Q-8Y
IXFD55N50-9X
IXFD55N50F-9F
IXFD66N50Q2-94
IXFD80N50Q2-95
IXFD80N50-9Y
IXFD36N55Q2-84
IXFD72N55Q2-95
IXFD60N55Q2-94
IXFD23N60Q-72
IXFD20N60-7X
IXFD30N60Q-82
IXFD36N60Q-8Y
IXFD44N60-9X
IXFD52N60Q2-94
IXFD70N60Q2-95
IXFD60N60-9Y
500
R
DS(ON)
max.
Ω
0.420
0.270
0.250
0.235
0.220
0.160
0.150
0.150
0.130
0.110
0.100
0.100
0.085
0.070
0.060
0.180
0.080
0.010
0.350
0.350
0.250
0.170
0.140
0.130
0.090
0.090
5F
7F
7X
72
74
8X
82
84
8F
8Y
9X
9F
94
95
9Y
84
95
94
72
7X
82
8Y
9X
94
95
9Y
Chip
type
Chip size
dimensions
mm
7.35 x 5.91
8.89 x 7.16
8.84 x 7.18
8.89 x 7.16
9.58 x 7.13
12.2 x 7.20
12.17 x 7.14
12.17 x 7.15
13.98 x 9.02
13.98 x 9.02
14.20 x 10.60
14.20 x 10.60
14.20 x 10.60
15.81 x 12.50
15.81 x 14.31
12.17 x 7.15
15.81 x 12.50
14.20 x 10.60
8.89 x 7.16
8.84 x 7.18
12.17 x 7.14
13.98 x 9.02
14.20 x 10.60
14.20 x 10.60
15.81 x 12.50
15.81 x 14.31
mils
289 x 233
350 x 282
348 x 283
350 x 282
377 x 281
480 x 283
479 x 281
479 x 281
550 x 355
550 x 355
559 x 417
559 x 417
559 x 417
623 x 492
623 x 563
479 x 281
623 x 492
559 x 417
350 x 282
348 x 283
479 x 281
550 x 355
559 x 417
559 x 417
623 x 492
623 x 563
10 mil x 4
15 mil x 3
15 mil x 3
15 mil x 3
15 mil x 3
15 mil x 4
15 mil x 4
15 mil x 4
12 mil x 6
12 mil x 6
15 mil x 6
15 mil x 6
15 mil x 6
15 mil x 6
12 mil x 12
15 mil x 4
15 mil x 6
15 mil x 6
15 mil x 3
15 mil x 3
15 mil x 4
12 mil x 6
15 mil x 6
15 mil x 6
15 mil x 6
12 mil x 12
IXFH13N50F
IXFH21N50F
IXFH24N50
IXFH26N50Q
IXFH28N50F
IXFH32N50
IXFH40N50Q
IXFH40N50Q2
IXFK48N50Q
IXFK48N50Q
IXFK55N50
IXFK55N50F
IXFK66N50Q2
IXFB80N50Q2
IXFN80N50
IXFH36N55Q2
IXFB72N55Q2
IXFK60N55Q2
IXFH23N60Q
IXFH20N60
IXFH30N60Q
IXFK36N60Q
IXFK44N60
IXFK52N60Q2
IXFB70N60Q2
IXFN60N60
Source -
bond wire
recommended
Equivalent
device
data sheet
HiPerFET
TM
s offer extended dv/dt ruggedness
The HiPerFET
TM
series of Power MOSFETs have an
extended stress capability in applications where the
intrinsic "free-wheeling diode" is used. Both static and
dynamic dv/dt withstand capability have been improved
to offer a significant margin of safety in high stress
conditions found in many types of inductive load
switching applications.
550
600
This table reflects only new designed chips. Please contact factory for older designs.
© 2004 IXYS All rights reserved
9
HiPerFET
TM
Power MOSFET
Type
V
DSS
max.
V
800
R
DS(ON)
max.
Ω
0.700
0.700
0.670
0.450
0.440
0.350
0.250
0.250
0.170
0.160
0.900
0.650
0.500
0.330
0.220
2.000
2.000
1.200
1.000
0.750
0.520
0.520
0.420
0.420
0.280
0.270
4.500
Chip
type
Chip size
dimensions
mm
8.84 x 7.18
8.89 x 7.16
8.89 x 7.16
12.2 x 7.20
12.17 x 7.14
13.98 x 9.02
14.20 x 10.60
14.20 x 10.60
15.81 x 12.50
15.81 x 14.31
8.91 x 7.22
12.2 x 7.20
13.98 x 9.02
14.20 x 10.60
15.81 x 14.31
7.35 x 5.91
6.81 x 6.74
8.89 x 7.16
8.89 x 7.16
12.2 x 7.20
13.98 x 9.02
13.98 x 9.02
14.20 x 10.60
14.20 x 10.60
15.81 x 12.50
15.81 x 14.31
5.77 x 4.96
mils
348 x 283
350 x 282
350 x 282
480 x 283
479 x 281
550 x 355
559 x 417
559 x 417
623 x 492
623 x 563
351 x 284
480 x 283
550 x 355
559 x 417
623 x 563
289 x 233
268 x 265
350 x 282
350 x 282
480 x 283
550 x 355
550 x 355
559 x 417
559 x 417
623 x 492
623 x 563
227 x 195
Source -
bond wire
recommended
15 mil x 3
15 mil x 3
15 mil x 3
15 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
15 mil x 6
15 mil x 6
12 mil x 12
12 mil x 4
15 mil x 4
12 mil x 6
15 mil x 6
12 mil x 12
10 mil x 2
10 mil x 2
15 mil x 3
12 mil x 4
15 mil x 4
12 mil x 6
12 mil x 6
15 mil x 6
15 mil x 6
15 mil x 6
12 mil x 12
12 mil x 1
Equivalent
device
data sheet
IXFH15N80
IXFH15N80Q
IXFH17N80Q
IXFH20N80Q
IXFH23N80Q
IXFK27N80Q
IXFK34N80
IXFK38N80Q2
IXFB50N80Q2
IXFN44N80
IXFH12N90
IXFH16N90Q
IXFK24N90Q
IXFK26N90
IXFN39N90
IXFH6N100F
IXFH6N100Q
IXFH10N100
IXFH14N100Q2
IXFH14N100
IXFK21N100Q
IXFK21N100F
IXFK24N100
IXFK24N100F
IXFB38N100Q2
IXFN36N100
IXFP3N120
‘Q - Class’ and ‘Q2 - Class’ HiPerFET
TM
MOSFETs
for Lower Gate Charge and Faster Switching
New ‘Q - class‘ HiPerFET MOSFETs (identified by
the suffix letter Q) are the result of a revolutionary
new chip design, which decreases the MOSFET‘s
total gate charge Qg and the Miller capacitance Crss,
while maintaining the ruggedness and fast switching
intrinsic diode of the company‘s current HiPerFET
product line. The result is a MOSFET with dramatically
improved switching efficiencies and thus enabling
higher frequency operation and smaller power
supplies.
The newer ‘Q2-Class’ line combines the low gate
charge advantages of Q-Class with a double-metal
construction resul-ting in a new generation of
MOSFETs with an intrinsic gate resistance an order
of magnitude lower than conventional MOSFETs. The
resulting reduction in switching losses allows large
MOSFETs to operate up satisfactorily up to the multi-
megahertz region.
IXFD15N80-7X
IXFD15N80Q-7Y
IXFD17N80Q-72
IXFD20N80Q-8X
IXFD23N80Q-82
IXFD27N80Q-8Y
IXFD34N80-9X
IXFD38N80Q2-94
IXFD50N80Q2-95
IXFD44N80-9Y
IXFD12N90-7L
IXFD16N90Q-8X
IXFD24N90Q-8Y
IXFD26N90-9X
IXFD39N90-9Y
IXFD6N100F-5F
IXFD6N100Q-5U
IXFD10N100-7Y
IXFD14N100Q2-7F
IXFD14N100-8X
IXFD21N100Q-8Y
IXFD21N100F-8F
IXFD24N100-9X
IXFD24N100F-9F
IXFD38N100Q2-95
IXFD36N100-9Y
IXFD3N120-4U
7X
7Y
72
8X
82
8Y
9X
94
95
9Y
7L
8X
8Y
9X
9Y
5F
5U
7Y
7F
8X
8Y
8F
9X
9F
95
9Y
4U
900
1000
1200
This table reflects only new designed chips. Please contact factory for older designs.
© 2004 IXYS All rights reserved
10
京公网安备 11010802033920号
EEWORLD
