Darlington Phototransistors
PNA2602M
Darlington Phototransistor
Unit : mm
ø3.5±0.2
4.8±0.3
2.4 2.4
4.5±0.3
Not soldered
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine light emission and photodetection on same
printed circuit board
Small size, thin side-view type package
Long lead and visible light cutoff design with PN205
4.2±0.3
2.3
1.9
M
ain
Di
sc te
on na
tin nc
ue e/
d
36.6±0.5
14.5
2.95
1.0
2.2±0.2
2-1.12
2-0.45±0.15
2-0.4±0.15
1.2
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Storage temperature
Operating ambient temperature
T
opr
T
stg
Parameter
isc
Symbol
I
CEO
λ
P
θ
t
r
, t
f*2
V
CE(sat)
*1
on
Electro-Optical Characteristics
(Ta = 25˚C)
ce
Dark current
V
CE
= 10V
V
CE
= 10V
Acceptance half angle
Response time
*1
*2
Ma
int
en
Peak sensitivity wavelength
an
Sensitivity to infrared emitters
S
IR*1
V
CE
= 10V, H = 3.75
µW/cm
2
Measured from the optical axis to the half power point
V
CC
= 10V, I
C
= 1mA, R
L
= 100Ω
I
C
= 100µA, H = 3.75
µW/cm
2
Collector saturation voltage
Measurements were made using infrared light (λ = 940 nm) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
90%
10%
t
d
t
r
t
f
,,
,,
50Ω
R
L
d
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2-0.6±0.15
2-0.45±0.15
1
2
2.54
R1.75
Ratings
20
5
30
Unit
V
V
1: Emitter
2: Collector
mA
˚C
100
mW
˚C
–25 to +80
–30 to +100
tin
ue
Conditions
min
0.1
typ
max
0.5
3.0
Unit
µA
nm
µs
V
mA
/D
850
35
deg.
150
1.5
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
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semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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–
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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