PN4356
Discrete POWER & Signal
Technologies
PN4356
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 67. See TN4033A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80
80
5.0
1.0
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
PN4356
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation
PN4356
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 50 V, I
E
= 0
V
CB
= 50 V, I
E
= 0, T
A
= 75
°C
V
EB
= 5.0 V, I
C
= 0
V
EB
= 4.0 V, I
C
= 0
80
80
5.0
50
5.0
10
100
V
V
V
nA
µA
µA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 10 V, I
C
= 100
µA
V
CE
= 10 V, I
C
= 1.0 mA
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 100 mA
V
CE
= 10 V, I
C
= 500 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
25
40
50
40
30
250
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.15
0.50
0.90
1.10
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
NF
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
V
CB
= 10 V, f = 1.0 MHz
V
EB
= 0.5 V, f = 1.0 MHz
I
C
= 50 mA, V
CE
= 10 V,
f = 100 MHz
V
CE
= 10 V, I
C
= 100
µA,
R
S
= 1.0 kΩ, f = 1.0 kHz,
B
W
= 1.0 Hz
1.0
30
110
5.0
3.0
dB
pF
pF
SWITCHING CHARACTERISTICS
t
on
t
off
Turn-on Time
Turn-off Time
V
CC
= 30 V, I
C
= 500 mA,
I
B1
= I
B2
= 50 mA
100
400
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Analogue and Mixed Signal
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