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DF3A3.6FV

Description
product for use only as protection against electrostatic discharge (esd).
CategoryDiscrete semiconductor    diode   
File Size124KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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DF3A3.6FV Overview

product for use only as protection against electrostatic discharge (esd).

DF3A3.6FV Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionR-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance130 Ω
JESD-30 codeR-PDSO-F3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.15 W
Certification statusNot Qualified
Nominal reference voltage3.6 V
surface mountYES
technologyZENER
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5.56%
Working test current5 mA
DF3A3.6FV
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A3.6FV
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
0.22±0.05
1.2±0.05
0.8±0.05
0.32±0.05
3
0.13±0.05
Unit: mm
1.2±0.05
0.8±0.05
0.4
0.4
0.5±0.05
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The mounting of two devices on an ultra-compact package reduces the
number of parts and lowers assembly cost.
1
2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P*
T
j
T
stg
Rating
150
150
−55~150
Unit
mW
°C
°C
VESM
1.CATHODE1
2.CATHODE2
3.ANODE
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
TOSHIBA
1-1Q1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.0015 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
*:
Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
0.5mm
0.45mm
0.45mm
0.4mm
Electrical Characteristics
(Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
V
R
=
1.8 V
V
R
= 0, f = 1MHz
Test Condition
Min
3.4
Typ.
3.6
110
Max
3.8
130
100
Unit
V
Ω
μA
pF
1
2007-11-01

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