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DF3A5.6FV

Description
product for use only as protection against electrostatic discharge (esd).
CategoryDiscrete semiconductor    diode   
File Size154KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

DF3A5.6FV Overview

product for use only as protection against electrostatic discharge (esd).

DF3A5.6FV Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Parts packaging codeSOD
package instructionR-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance40 Ω
JESD-30 codeR-PDSO-F3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.15 W
Certification statusNot Qualified
Nominal reference voltage5.6 V
surface mountYES
technologyZENER
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6.19%
Working test current5 mA
Base Number Matches1
DF3A5.6FV
TOSHIBA Diodes For Protecting Against ESD
Epitaxial Planar Type
DF3A5.6FV
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
0.22±0.05
1.2±0.05
0.8±0.05
0.32±0.05
3
0.13±0.05
Unit: mm
1.2±0.05
0.8±0.05
0.4
0.4
0.5±0.05
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
1
2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P*
T
j
T
stg
Rating
150
150
−55~150
Unit
mW
°C
°C
VESM
1.CATHODE1
2.CATHODE2
3.ANODE
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-1Q1B
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.0015 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*:
Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
0.5mm
0.45mm
0.45mm
0.4mm
Electrical Characteristics
(Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
V
R
=
2.5 V
V
R
= 0, f = 1MHz
Test Condition
Min
5.3
Typ.
5.6
65
Max
6.0
40
1.0
Unit
V
Ω
μA
pF
1
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