2N5460
2N5461
2N5462
SILICON
P-CHANNEL JFETS
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The CENTRAL SEMICONDUCTOR 2N5460, 2N5461,
and 2N5462 are silicon P-Channel JFETs designed for
low level amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS:
(TA=25°C)
Drain-Gate Voltage
Reverse Gate-Source Voltage
Continuous Gate Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDG
VGSR
IG
PD
TJ, Tstg
UNITS
V
V
mA
mW
°C
40
40
10
310
-65 to +150
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N5460
2N5461
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
IGSS
VGS=20V
-
5.0
-
5.0
IGSS
VGS=20V, TA=100°C
-
1.0
-
1.0
IDSS
BVGSS
VGS
VGS
VGS
VGS(OFF)
VDS=15V, f=1.0kHz
IG=10μA
VDS=15V, ID=0.1mA
VDS=15V, ID=0.2mA
VDS=15V, ID=0.4mA
VDS=15V, ID=1.0μA
VDS=15V, VGS=0, f=1.0kHz
VDS=15V, VGS=0, f=1.0kHz
VDS=15V, VGS=0, f=1.0MHz
VDS=15V, VGS=0, f=1.0MHz
VDS=15V, VGS=0, f=100Hz, BW=1.0Hz
VDS=15V, VGS=0, f=100Hz,
RG=1.0MΩ, BW=1.0Hz
1.0
40
0.5
-
-
0.75
1.0K
-
-
-
-
-
5.0
-
4.0
-
-
6.0
4.0K
75
2.0
7.0
115
2.5
2.0
40
-
0.8
-
1.0
1.5K
-
-
-
-
-
9.0
-
-
4.5
-
7.5
5.0K
75
2.0
7.0
115
2.5
2N5462
MIN MAX
-
5.0
-
4.0
40
-
-
1.5
1.8
2.0K
-
-
-
-
-
1.0
16
-
-
-
6.0
9.0
6.0K
75
2.0
7.0
115
2.5
UNITS
nA
μA
mA
V
V
V
V
V
μS
μS
pF
pF
nV/ Hz
dB
|
yfs
|
|
yos
|
Crss
Ciss
eN
NF
R1 (25-January 2016)
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nd
day air)
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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