TC7MBL3245SFT/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7MBL3245SFT, TC7MBL3245SFK
Low Voltage/Low Capacitance Octal Bus Switch
The TC7MBL3245S provides eight bits of low- voltage,
high-speed bus switching in a standard ’245 device pinout. The
low ON-resistance of the switch allows connections to be made with
minimal propagation delay and while maintaining CMOS low power
dissipation.
The device comprises a single 8-bit switch. When output enable
(
OE
) is low, the switch is on and port A is connected to port B.
When
OE
is high, the switch is open and a high-impedance state
exists between the two ports.
All inputs are equipped with protection circuits to guard against
static discharge.
TC7MBL3245SFT
TC7MBL3245SFK
Features
•
•
•
•
•
•
•
Operating voltage: V
CC
= 1.65~3.6 V
Low capacitance: C
I/O
= 12 pF
Switch On (typ.) @3 V
Low on resistance: R
ON
= 9
Ω
(typ.) @3 V
ESD performance: Machine model
≥ ±200
V
Human body model
≥ ±2000
V
Power down protection for inputs (OE input only)
Package: TSSOP20,VSSOP (US20)
Pin compatible with the 74xx245 type
Weight
TSSOP20-P-0044-0.65A
VSSOP20-P-0030-0.50
: 0.08 g (typ.)
: 0.03 g (typ.)
Pin Assignment (top view)
NC
A1
A2
A3
A4
A5
A6
A7
A8
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
11
V
CC
OE
B1
B2
B3
B4
B5
B6
B7
B8
GND 10
(top view)
NC-No Internal Connection
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TC7MBL3245SFT/FK
Truth Table
Inputs
OE
L
H
Function
A port
=
B port
Disconnect
System Diagram
A1
B1
A8
B8
OE
Absolute Maximum Ratings (Note)
Characteristic
Power supply range
Control pin input voltage
Switch terminal I/O voltage
Clump diode
current
Switch I/O current
Power dissipation
DC V
CC
/GND current
Storage temperature
Control input pin
Switch terminal
Symbol
V
CC
V
IN
V
S
I
IK
I
S
P
D
I
CC
/I
GND
T
stg
Rating
−0.5~4.6
−0.5~4.6
−0.5~V
CC
+
0.5
−50
±50
50
180
±100
−65~150
Unit
V
V
V
mA
mA
mA
mW
mA
°C
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges (Note)
Characteristic
Power supply voltage
Control pin input voltage
Switch I/O voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
S
T
opr
dt/dv
Rating
1.65~3.6
0~3.6
0~V
CC
−40~85
0~10
Unit
V
V
V
°C
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
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TC7MBL3245SFT/FK
Electrical Characteristics
DC Characteristics
(Ta
= −40~85°C)
Parameter
“H” level
Input voltage
“L” level
Input leakage current
Power off leakage current
Off-state leakage current
(switch off)
V
IL
I
IN
I
OFF
I
SZ
V
IN
=
0~3.6V
OE
=
0~3.6 V
A, B
=
0~V
CC
,
OE
=
V
CC
V
IS
=
0 V, I
IS
=
30 mA
V
IS
=
3.0 V, I
IS
=
30 mA
On resistance
(Note2)
R
ON
V
IS
=
2.4 V, I
IS
=
15 mA
V
IS
=
0 V, I
IS
=
24 mA
V
IS
=
2.3 V, I
IS
=
24 mA
V
IS
=
2.0 V, I
IS
=
15 mA
Increase in I
CC
per input
I
CC
V
IN
=
V
CC
or GND, I
OUT
=
0
(Note1)
(Note1)
(Note1)
(Note1)
(Note1)
(Note1)
⎯
1.65~3.6
1.65~3.6
0
1.65~3.6
3.0
3.0
3.0
2.3
2.3
2.3
3.6
Symbol
V
IH
Test Condition
⎯
V
CC
(V)
1.65~3.6
Min
0.7
×
V
CC
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
9
15
19
10
17
21
⎯
Max
⎯
0.3
×
V
CC
±1.0
1.0
±1.0
13
20
27
16
24
30
10
μA
Ω
V
Unit
μA
μA
μA
Note1: All typical values are at Ta=25°C.
Note2: Measured by the voltage drop between A and B pins at the indicated current through the switch.
On resistance is determined by the lower of the voltages on the two (A or B) pins.
AC Characteristics
(Ta
= −40~85°C)
Characteristics
Symbol
Test Condition
V
CC
(V)
3.3
±
0.3
Figure 1, Figure 2
2.5
±
0.2
1.8
±
0.15
3.3
±
0.3
Figure 1, Figure 2
2.5
±
0.2
1.8
±
0.15
Min
⎯
⎯
⎯
⎯
⎯
⎯
Max
6
7
11
6
7
11
ns
ns
Unit
Output disable time
t
pLZ
t
pHZ
Output disable time
t
pLZ
t
pHZ
Capacitive Characteristics (Ta
=
25°C)
Characteristics (Note)
Control pin input capacitance
Switch terminal capacitance
Symbol
C
IN
C
I/O
OE
=
V
CC
(switch off)
Test Condition
V
CC
(V)
3.0
3.0
3.0
Typ.
3
6
12
Unit
pF
pF
pF
OE
=
GND (switch on)
Note : This parameter is guaranteed by design
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TC7MBL3245SFT/FK
R
ON
Characteristic (typ.) Ta=25℃
40
35
30
Vcc = 2.3V
Vcc = 3.0V
R
ON
(Ω)
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
V
IS
(V)
AC Test Circuit
Switch
R
L
Open
2
×
V
CC
GND
Measure
C
L
=
50 pF
R
L
=
500
Ω
C
L
R
L
Parameter
t
pLH
, t
pHL
t
pLZ
, t
pZL
t
pHZ
, t
pZH
Switch
Open
2
×
V
CC
GND
Output
Figure 1
AC Waveform
t
r
2.5 ns
Output Enable
( OE )
t
pLZ
Output (A, B)
Low to Off to Low
t
pHZ
Output (A, B)
High to Off to High
Outputs
enabled
90%
50%
V
OL
Outputs
disabled
Outputs
enabled
t
f
2.5 ns
90%
50%
V
CC
10%
t
pZL
V
OH
50%
10%
t
pZH
V
OL
V
OH
GND
Figure 2 t
pLZ
, t
pHZ
, t
pZL
, t
pZH
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2007-10-19
TC7MBL3245SFT/FK
Rise and Fall Times (tr / tf) of the TC7MBL3245S I/O Signals
The tr(out) and tf(out) values of the output signals are affected by the CR time constant of the input, which consists of
the switch terminal capacitance (C
I/O
) and the on-resistance (R
ON
) of the input.
In practice, the tr(out) and tf(out) values are also affected by the circuit’s capacitance and resistance components other
than those of the TC7MBL3245S.
The tr / tf (out) values can be approximated as follows. (Figure 4 shows the test circuit.)
tr / tf out (approx) = - ( C
I/O
+ C
L
)
½
(R
DRIVE+
R
ON
)
½
ln ( ( ( V
OH
– V
OL
) – V
M
) / ( V
OH
– V
OL
) )
where, R
DRIVE
is the output impedance of the previous-stage circuit.
Calculation example:
tr out (approx) = - ( 12+ 15 )E-12
½
( 120 + 9)
½
ln ( ( ( 3.0 - 0 ) – 1.5 ) / ( 3.0 – 0 ) )
≈
2.4ns
Calculation conditions:
V
CC
= 3.0V , C
L
= 15pF , R
DRIVE
= 120Ω(output impedance of the previous IC), V
M
= 1.5V(V
CC
/ 2)
Output of the previous IC = digital (i.e., high-level voltage = V
CC
; low-level voltage = GND)
Previous IC
Waveform generated without the TC7MBL3245S
R
DRIVE
Measure
V
CC
C
L
GND
R
DRIVE
= output impedance of the previous IC
Previous IC
TC7MBL3245S
Waveform generated with the TC7MBL3245S added
C
I/O
(Switch On)
Measure
V
M
C
L
V
M
V
OL
tr out
tf out
R
DRIVE
An/Bn
Bn/An
V
OH
R
ON
R
DRIVE
= output impedance of the previous IC
Parameter
V
M
V
CC
3.3 ± 0.3 V
V
CC
/ 2
2.5 ± 0.2 V
V
CC
/ 2
1.8 ± 0.15 V
V
CC
/ 2
=
Figure 3 Test Circuit
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2007-10-19
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