HN7G05FU
TOSHIBA Multichip Discrete Device
HN7G05FU
Power Management Switch Applications, Inverter Circuit
Applications, Driver Circuit Applications and Interface
Circuit Applications
Unit: mm
Q1 (transistor): RN2301 equivalent
Q2 (MOSFET): 2SK1830 equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−10
−100
Unit
V
V
V
mA
JEDEC
―
―
2-2J1E
Q2 (MOSFET) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Symbol
V
DS
V
GSS
I
D
Rating
20
10
50
Unit
V
V
mA
JEITA
TOSHIBA
Weight: 0.0068 g (typ.)
Marking
Q1, Q2 Common Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P (Note 1)
T
j
T
stg
Rating
200
150
−55~150
Unit
mW
°C
°C
60
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
Note 1: Total rating
1
2007-11-01
HN7G05FU
Q1
(
Transistor
)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistor
Resistor ratio
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I(ON)
V
I(OFF)
R1
R1/R2
Test Condition
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −10
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CE
= −0.2
V, I
C
= −5
mA
V
CE
= −5
V, I
C
= −0.1
mA
⎯
⎯
Min
⎯
⎯
−0.82
30
⎯
−1.1
−1.0
3.29
0.9
Typ.
⎯
⎯
⎯
⎯
−0.1
⎯
⎯
4.7
1.0
Max
−100
−500
−1.52
⎯
−0.3
−2.0
−1.5
6.11
1.1
V
V
V
kΩ
Unit
nA
nA
mA
Q2
(MOSFET)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
th
⎪Y
fs
⎪
R
DS (ON)
Test Condition
V
GS
=
10 V, V
DS
=
0
I
D
=
100
μA,
V
GS
=
0
V
DS
=
20 V, V
GS
=
0
V
DS
=
3 V, I
D
=
0.1 mA
V
DS
=
3 V, I
D
=
10 mA
I
D
=
10 mA V
GS
=
2.5 V
Min
⎯
20
⎯
0.5
20
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
20
Max
1
⎯
1
1.5
⎯
40
Unit
μA
V
μA
V
mS
Ω
2
2007-11-01
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