DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PN3439; PN3440
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Jun 17
File under Discrete Semiconductors, SC04
1997 Sep 04
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES
•
Low current (max. 100 mA)
•
High voltage (max. 350 V).
APPLICATIONS
•
Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package.
1
handbook, halfpage
PN3439; PN3440
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
2
3
1
2
3
MAM279
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
PN3439
PN3440
V
CEO
collector-emitter voltage
PN3439
PN3440
I
CM
P
tot
h
FE
h
FE
f
T
peak collector current
total power dissipation
DC current gain
PN3439
DC current gain
PN3440
transition frequency
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
C
= 20 mA; V
CE
= 10 V
40
70
−
−
MHz
T
amb
≤
25
°C
I
C
= 2 mA; V
CE
= 10 V
30
−
open base
−
−
−
−
350
250
200
500
V
V
mA
mW
open emitter
−
−
400
300
V
V
CONDITIONS
MIN.
MAX.
UNIT
1997 Sep 04
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PN3439
PN3440
V
CEO
collector-emitter voltage
PN3439
PN3440
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
PN3439; PN3440
MIN.
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
400
300
350
250
5
100
200
100
500
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
250
UNIT
K/W
1997 Sep 04
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CBO
I
EBO
h
FE
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
PN3439
collector cut-off current
PN3440
emitter cut-off current
DC current gain
PN3439
DC current gain
PN3440
collector-emitter saturation voltage I
C
= 50 mA; I
B
= 4 mA
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 50 mA; I
B
= 4 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
C
= 20 mA; V
CE
= 10 V
I
C
= 0; V
EB
= 5 V
I
C
= 2 mA; V
CE
= 10 V
I
E
= 0; V
CB
= 250 V
PARAMETER
collector cut-off current
CONDITIONS
I
E
= 0; V
CB
= 360 V
PN3439; PN3440
MIN.
−
−
−
30
40
−
−
−
−
70
MAX.
100
100
100
−
−
500
1.3
2
20
−
UNIT
nA
nA
nA
mV
V
pF
pF
MHz
1997 Sep 04
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
PN3439; PN3440
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
EIAJ
SC-43
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.56
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L1
(1)
2.5
1997 Sep 04
5
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