DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PN2369; PN2369A
NPN switching transistors
Product specification
Supersedes data of 1997 May 07
1999 Apr 14
Philips Semiconductors
Product specification
NPN switching transistors
FEATURES
•
Low current (max. 200 mA)
•
Low voltage (max. 15 V).
APPLICATIONS
•
High-speed switching applications.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package.
PINNING
PIN
1
2
3
collector
base
emitter
PN2369; PN2369A
DESCRIPTION
1
handbook, halfpage
2
3
1
2
3
MAM279
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−55
−
−55
MIN.
MAX.
40
15
5
200
300
100
500
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 14
2
Philips Semiconductors
Product specification
NPN switching transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
PN2369
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
amb
= 125
°C
I
C
= 0; V
EB
= 4 V
I
C
= 10 mA; V
CE
= 1 V
I
C
= 10 mA; V
CE
= 1 V;
T
amb
=
−55 °C
I
C
= 100 mA; V
CE
= 2 V
DC current gain
PN2369A
I
C
= 10 mA; V
CE
= 350 mV
I
C
= 10 mA; V
CE
= 350 mV;
T
amb
=
−55 °C
I
C
= 30 mA; V
CE
= 400 mV
I
C
= 100 mA; V
CE
= 1 V
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA
PN2369
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA
PN2369A
I
C
= 10 mA; I
B
= 10 mA
I
C
= 30 mA; I
B
= 3 mA
I
C
= 100 mA; I
B
= 10 mA
V
BEsat
C
c
f
T
t
on
t
d
t
r
t
off
t
s
t
f
base-emitter saturation voltage
collector capacitance
transition frequency
I
C
= 10 mA; I
B
= 1 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PN2369; PN2369A
VALUE
250
UNIT
K/W
MIN.
−
−
−
40
20
20
40
20
30
20
−
−
−
−
−
700
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
400
30
100
120
−
−
120
−
−
−
250
200
300
250
500
850
4
−
mV
mV
mV
mV
mV
mV
pF
MHz
nA
µA
nA
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 500
I
Con
= 10 mA; I
Bon
= 3 mA;
I
Boff
=
−1.5
mA
−
−
−
−
−
−
Switching times (between 10% and 90% levels);
(see Fig.2)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
8
−
−
10
−
−
10
4
6
20
10
10
ns
ns
ns
ns
ns
ns
1999 Apr 14
3
Philips Semiconductors
Product specification
NPN switching transistors
PN2369; PN2369A
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 0.5 V to 4.2 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
1 ns.
R1 = 56
Ω;
R2 = 1 kΩ; R
B
= 1 kΩ; R
C
= 270
Ω.
V
BB
= 0.2 V; V
CC
= 2.7 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
1999 Apr 14
4
Philips Semiconductors
Product specification
NPN switching transistors
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
PN2369; PN2369A
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
EIAJ
SC-43
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.56
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L1
(1)
2.5
1999 Apr 14
5
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