®
PN2222A
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Ordering Code
PN2222A
PN2222A-AP
s
Marking
Package / Shipment
PN2222A TO-92 / Bulk
PN2222A TO-92
/ Ammopack
s
s
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY
THE PNP COMPLEMENTARY TYPE IS
PN2907A
TO-92
Bulk
TO-92
Ammopack
APPLICATIONS
s
WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
s
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Total Dissipation at T
amb
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
75
40
6
0.6
0.8
500
-65 to 150
150
Unit
V
V
V
A
A
mW
o
o
C
C
February 2003
1/6
PN2222A
THERMAL DATA
R
thj-amb
•
R
thj-case
•
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Max
Max
250
83.3
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CEX
I
BEX
I
CBO
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= -3 V)
Base Cut-off Current
(V
BE
= -3 V)
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= 60 V
V
CE
= 60 V
V
CB
= 75 V
V
CB
= 75 V
V
EB
= 3 V
I
C
= 10 mA
40
Min.
Typ.
Max.
10
20
10
10
15
Unit
nA
nA
nA
µA
nA
V
T
j
= 150
o
C
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Collector-Base
Saturation Voltage
DC Current Gain
I
C
= 10
µA
75
V
V
(BR)EBO
I
E
= 10
µA
6
V
V
CE(sat)
∗
V
BE(sat)
∗
h
FE
∗
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
0.1 mA
1 mA
10 mA
150 mA
150 mA
500 mA
I
B
= 15 mA
I
B
= 50 mA
I
B
= 15 mA
I
B
= 50 mA
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 1 V
V
CE
= 10 V
f = 1 MHz
f = 1MHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
f = 1 KHz
50
75
5
25
2
0.25
0.6
35
50
75
100
50
40
270
4
20
4
0.3
1
1.2
2
V
V
V
V
300
f
T
C
CBO
C
EBO
NF
h
ie
∗
h
re
∗
Transition Frequency
Collector-Base
Capacitance
Emitter-Base
Capacitance
Noise Figure
Input Impedance
Reverse Voltage Ratio
I
C
= 20 mA V
CE
= 20V f = 100MHz
I
E
= 0
I
C
= 0
V
CB
= 10 V
V
EB
= 0.5 V
MHz
8
25
pF
pF
dB
8
1.25
8
4
300
375
35
200
µS
µS
KΩ
KΩ
10
10
-4
-4
I
C
= 0.1 mA V
CE
= 10 V
∆f
= 200 Hz R
G
= 1 KΩ
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
I
C
= 1 mA
I
C
= 10 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 1 mA
I
C
= 10 mA
h
fe
∗
h
oe
∗
Small Signal Current
Gain
Output Admittance
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
2/6
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