Phototransistors
PN163NC
Silicon NPN Phototransistor
3.5±0.3
Gate the rest
2.4 1.1 0.8 max.
1.1
0.8
Unit : mm
3.0±0.3
1.95±0.25
1.4±0.2
0.9
0.5
For optical control systems
Features
High sensitivity
Fast response : t
r
= 4
µs
(typ.)
Adoption of visible light cutoff resin
Ultraminiature, thin side-view type package
ø1.1
R0.5
12 min.
Not soldered 2.15 max.
2-0.5±0.15
0.3±0.15
2
2.54
1
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
I
C
P
C
T
opr
T
stg
Ratings
20
20
50
–25 to +85
–30 to +100
Unit
V
mA
mW
˚C
˚C
1: Collector
2: Emitter
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
*1
*2
Symbol
I
CEO
S
IR*1
λ
P
θ
t
r*2
t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, H = 15µW/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA
R
L
= 100Ω
I
CE(L)
= 3µA, H = 15µW/cm
2
min
6
typ
max
0.2
40
Unit
µA
µA
nm
deg.
µs
µs
850
25
4
4
0.5
V
Measurements were made using infrared light (λ = 940 nm) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,
,,
,,
50Ω
R
L
1
Phototransistors
PN163NC
P
C
— Ta
60
3.0
I
CE(L)
— V
CE
10
2
I
CE(L)
— L
I
CE(L)
(mA)
V
CE
= 10V
Ta = 25˚C
T = 2856K
P
C
(mW)
50
I
CE(L)
(mA)
Ta = 25˚C
T = 2856K
2.5
L = 1000 lx
10
Collector power dissipation
40
2.0
Collector photo current
Collector photo current
30
1.5
500 lx
1.0
1
20
10
–1
10
0.5
100 lx
0
– 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
10
–2
1
10
10
2
10
3
Ambient temperature
Ta (˚C )
Collector to emitter voltage
V
CE
(V)
Illuminance L (lx)
I
CEO
— Ta
10
2
V
CE
= 10V
10
2
I
CE(L)
— Ta
V
CE
= 10V
T = 2856K
100
Spectral sensitivity characteristics
V
CE
= 10V
Ta = 25˚C
I
CE(L)
(mA)
I
CEO
(nA)
10
10
S (%)
Relative sensitivity
0
40
80
120
80
Dark current
1
Collector photo current
60
40
1
10
–1
20
10
–2
– 20
0
20
40
60
80
100
10
–1
– 40
0
600
700
800
900
1000 1100 1200
Ambient temperature
Ta (˚C )
Ambient temperature
Ta (˚C )
Wavelength
λ
(nm)
Directivity characteristics
0˚
100
10˚
20˚
10
4
t
r
— I
CE(L)
V
CC
= 10V
Ta = 25˚C
10
4
t
f
— I
CE(L)
V
CC
= 10V
Ta = 25˚C
80
70
60
50
40
30
20
Relative sensitivity S (%)
90
30˚
10
3
10
3
Rise time t
r
(µs)
40˚
50˚
60˚
70˚
80˚
90˚
10
2
Fall time t
f
(µs)
10
2
R
L
= 1kΩ
500Ω
100Ω
1
10
R
L
= 1kΩ
500Ω
100Ω
10
1
10
–1
10
–2
10
–1
1
10
10
2
10
–1
10
–2
10
–1
1
10
10
2
Collector photo current
I
CE(L)
(mA)
Collector photo current
I
CE(L)
(mA)
2
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