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PMV65XP

Description
3900 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size67KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

PMV65XP Overview

3900 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

PMV65XP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)3.9 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.92 W
surface mountYES
PMV65XP
P-channel TrenchMOS™ extremely low level FET
Rev. 01 — 28 September 2004
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode field effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s
Low threshold voltage
s
Low on-state resistance.
1.3 Applications
s
Low power DC-to-DC converters
s
Load switching
s
Battery management
s
Battery powered portable equipment.
1.4 Quick reference data
s
V
DS
≤ −20
V
s
R
DSon
76 mΩ
s
I
D
≤ −3.9
A
s
Q
gd
= 0.65 nC (typ).
2. Pinning information
Table 1:
Pin
1
2
3
Discrete pinning
Description
gate (g)
source (s)
drain (d)
g
Simplified outline
3
Symbol
d
1
2
SOT23
s
003aaa671
SOT23

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