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PMV31XN

Description
5900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size75KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

PMV31XN Overview

5900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

PMV31XN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)5.9 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
PMV31XN
µTrenchMOS™
extremely low level FET
Rev. 01 — 26 February 2003
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMV31XN in SOT23.
2. Features
s
s
s
s
TrenchMOS™ technology
Very fast switching
Low threshold voltage
Surface mount package.
3. Applications
s
Battery powered motor control
s
High-speed switch in set top box power supplies.
4. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
3
d
Simplified outline
Symbol
source (s)
drain (d)
1
Top view
2
MSB003
g
s
MBB076
SOT23
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