DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST6428; PMST6429
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 12
1999 Apr 22
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 50 V).
APPLICATIONS
•
General purpose switching and amplification in e.g.
telephony and professional communication equipment.
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
MARKING
TYPE NUMBER
PMST6428
PMST6429
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
∗1K
∗1L
Fig.1
1
Top view
PMST6428; PMST6429
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
2
MAM062
Simplified outline (SC-70; SOT323) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
PMST6428
PMST6429
V
CEO
collector-emitter voltage
PMST6428
PMST6429
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
50
45
6
100
200
100
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
−
60
55
V
V
MIN.
MAX.
UNIT
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
≤
25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
PMST6428
CONDITIONS
I
E
= 0; V
CB
= 30 V
PARAMETER
thermal resistance from junction to ambient
PMST6428; PMST6429
CONDITIONS
note 1
VALUE
625
UNIT
K/W
MIN.
−
−
−
250
250
250
250
500
500
500
500
−
−
560
−
−
100
MAX.
10
10
10
−
650
−
−
−
1250
−
−
200
600
660
3
12
700
UNIT
nA
µA
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
V
CE
= 5 V
I
C
= 0.01 mA
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
DC current gain
PMST6429
V
CE
= 5 V
I
C
= 0.01 mA
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
V
CEsat
V
BE
C
c
C
e
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 10 mA; I
B
= 0.5 mA; note 1
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 1 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 5 V; f = 100 MHz
mV
mV
mV
pF
pF
MHz
1999 Apr 22
3
Philips Semiconductors
Product specification
NPN general purpose transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMST6428; PMST6429
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 22
4
Philips Semiconductors
Product specification
NPN general purpose transistors
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
PMST6428; PMST6429
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 22
5
京公网安备 11010802033920号
EEWORLD
