DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST3906
PNP switching transistor
Product specification
Supersedes data of 1997 May 27
1999 Apr 22
Philips Semiconductors
Product specification
PNP switching transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
Switching in telephony and professional communication
equipment.
handbook, halfpage
PMST3906
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
DESCRIPTION
3
PNP switching transistor in a SOT323 plastic package.
NPN complement: PMST3904.
MARKING
TYPE NUMBER
PMST3906
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
∗2A
1
Top view
2
1
2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−40
−40
−6
−100
−200
−100
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 22
2
Philips Semiconductors
Product specification
PNP switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−6
V
V
CE
=
−1
V; (see Fig.2)
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−50
mA; note 1
I
C
=
−100
mA; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−1
mA; note 1
I
C
=
−50
mA; I
B
=
−5
mA; note 1
I
C
=
−10
mA; I
B
=
−1
mA; note 1
I
C
=
−50
mA; I
B
=
−5
mA; note 1
I
E
= i
e
= 0; V
CB
=
−5
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−500
mV; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−20
V; f = 100 MHz
I
C
=
−100 µA;
V
CE
=
−5
V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
60
80
100
60
30
−
−
−
−
−
−
250
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMST3906
VALUE
625
UNIT
K/W
MAX.
−50
−10
−50
−
−
300
−
−
−200
−200
−850
−950
4.5
10
−
4
UNIT
nA
µA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10% and 90% levels);
(see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
Note
1.
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
−10
mA; I
Bon
=
−1
mA; I
Boff
= 1 mA
−
−
−
−
−
−
65
35
35
300
225
75
ns
ns
ns
ns
ns
ns
1999 Apr 22
3
Philips Semiconductors
Product specification
PNP switching transistor
PMST3906
MGD835
handbook, full pagewidth
160
hFE
120
80
40
0
−10
−2
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
V
CE
=
−1
V
Fig.2 DC current gain; typical values.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
=
−5
V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
V
BB
= 1.9 V; V
CC
=
−3
V.
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
1999 Apr 22
4
Philips Semiconductors
Product specification
PNP switching transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMST3906
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 22
5
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