DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST2222; PMST2222A
NPN switching transistors
Product specification
Supersedes data of 1997 Jul 14
1999 Apr 22
Philips Semiconductors
Product specification
NPN switching transistors
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
High-speed switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST2907A.
MARKING
TYPE NUMBER
PMST2222
PMST2222A
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
∗1B
∗1P
handbook, halfpage
PMST2222; PMST2222A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
Top view
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
PMST2222
PMST2222A
V
CEO
collector-emitter voltage
PMST2222
PMST2222A
V
EBO
emitter-base voltage
PMST2222
PMST2222A
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
−
−
−
−
−
−
−65
−
−65
5
6
600
800
200
200
+150
150
+150
V
V
mA
mA
mA
mW
°C
°C
°C
open base
−
−
30
40
V
V
CONDITIONS
open emitter
−
−
60
75
V
V
MIN.
MAX.
UNIT
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN switching transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector cut-off current
PMST2222
collector cut-off current
PMST2222A
I
EBO
h
FE
collector cut-off current
DC current gain
PARAMETER
thermal resistance from junction to ambient
PMST2222; PMST2222A
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CONDITIONS
I
E
= 0; V
CB
= 50 V
I
E
= 0; V
CB
= 50 V; T
j
= 125
°C
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 125
°C
I
C
= 0; V
EB
= 3 V
I
C
= 0.1 mA; V
CE
= 10 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 1 V; note 1
I
C
= 150 mA; V
CE
= 10 V; note 1
−
−
−
−
−
MIN.
MAX.
10
10
10
10
10
−
−
−
−
−
300
−
−
400
1.6
300
1
1.3
2.6
1.2
2
8
30
25
−
−
UNIT
nA
µA
nA
µA
nA
35
50
75
50
100
30
40
I
C
= 10 mA; V
CE
= 10 V; T
amb
=
−55 °C
35
DC current gain
PMST2222
PMST2222A
V
CEsat
collector-emitter saturation voltage
PMST2222
collector-emitter saturation voltage
PMST2222A
V
BEsat
base-emitter saturation voltage
PMST2222
base-emitter saturation voltage
PMST2222A
C
c
C
e
collector capacitance
emitter capacitance
PMST2222
PMST2222A
f
T
transition frequency
PMST2222
PMST2222A
I
C
= 500 mA; V
CE
= 10 V; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
−
−
−
−
−
−
0.6
−
−
−
−
mV
V
mV
V
V
V
V
V
pF
pF
pF
MHz
MHz
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
250
300
1999 Apr 22
3
Philips Semiconductors
Product specification
NPN switching transistors
PMST2222; PMST2222A
SYMBOL
F
PARAMETER
noise figure
CONDITIONS
I
C
= 200
µA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
−
MIN.
MAX.
4
UNIT
dB
Switching times (between 10% and 90% levels);
(see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA
−
−
−
−
−
−
35
15
20
250
200
60
ns
ns
ns
ns
ns
ns
ndbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 9.5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
=
−3.5
V; V
CC
= 29.5 V.
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
1999 Apr 22
4
Philips Semiconductors
Product specification
NPN switching transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMST2222; PMST2222A
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 22
5
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