DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMMT591A
PNP BISS transistor
Product specification
Supersedes data of 1999 May 21
1999 Aug 04
Philips Semiconductors
Product specification
PNP BISS transistor
FEATURES
•
High current (max. 1 A)
•
Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
•
Battery powered units where high current and low power
consumption are important.
DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a
SOT23 plastic package. NPN complement: PMMT491A.
MARKING
TYPE NUMBER
PMMT591A
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
MARKING CODE
(1)
9B∗
Top view
handbook, halfpage
PMMT591A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−40
−40
−5
−1
−2
−1
250
+150
150
+150
V
V
V
A
A
A
mW
°C
°C
°C
UNIT
1999 Aug 04
2
Philips Semiconductors
Product specification
PNP BISS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
B
= 0; V
CE
=
−30
V
I
C
= 0; V
EB
=
−5
V
V
CE
=
−5
V; note 1
I
C
=
−1
mA
I
C
=
−100
mA
I
C
=
−500
mA
I
C
=
−1
A
V
CEsat
collector-emitter saturation voltage note 1
I
C
=
−100
mA; I
B
=
−1
mA
I
C
=
−500
mA; I
B
=
−20
mA
I
C
=
−1
A; I
B
=
−100
mA
V
BEsat
V
BE
C
c
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
I
C
=
−1
A; I
B
=
−50
mA; note 1
V
CE
=
−5
V; I
C
=
−1
A; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz
−
−
−
−
−
−
150
300
300
250
160
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMMT591A
VALUE
500
UNIT
K/W
MAX.
−100
−100
−100
−
800
−
−
−200
−350
−500
−1.1
−1
12
−
UNIT
nA
nA
nA
mV
mV
mV
V
V
pF
MHz
1999 Aug 04
3
Philips Semiconductors
Product specification
PNP BISS transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMMT591A
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Aug 04
4
Philips Semiconductors
Product specification
PNP BISS transistor
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
PMMT591A
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 04
5
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