MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
TMD0507-2A
HIGH POWER
P1dB=33.0dBm at 5.1GHz to 7.2GHz
HIGH GAIN
G1dB=22.0dB at 5.1GHz to 7.2GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Drain Supply Voltage
Gate Supply Voltage
Input Power
Flange Temperature
Storage Temperature
( Ta= 25°C )
°
SYMBOL
V
DD
V
GG
P
in
T
f
T
stg
UNIT
V
V
W
°C
°C
RATING
15
-10
0.1
-30
∼
+80
-65
∼
+175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
°
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Gain Flatness (1)*
Gain Flatness (2)**
Drain Current***
Input VSWR
*
∆G1
at f = 5.9 – 7.2GHz
**
∆G2
at f = 5.1 – 7.2GHz
*** I
DD
= I
DD1
+ I
DD2
+ I
DD3
∆G1
∆G2
I
DD
VSWRi
G
1dB
SYMBOL
P
1dB
V
DD1
=V
DD2
=V
DD3
= 10V
V
GG
= -5V
dB
1.60
±1.5
±2.0
1.90
3.0
dB
20.0
22.0
CONDITION
UNIT MIN. TYP. MAX.
dBm
32.0
33.0
f
= 5.1 – 7.2GHz
dB
A
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
June 1998
RF/Wirelessly
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