Philips Semiconductors
Product specification
High-speed diodes
FEATURES
•
Small hermetically sealed glass
SMD package
•
High switching speed: max. 4 ns
•
General application
•
Continuous reverse voltage:
max. 50 V
•
Repetitive peak reverse voltage:
max. 75 V
•
Repetitive peak forward current:
max. 600 mA and 450 mA
respectively.
APPLICATIONS
•
High-speed switching
•
The PMLL4150 is primarily
intended for general purpose use in
computer and industrial
applications.
•
The PMLL4151 and PMLL4153 are
intended for military and industrial
applications.
handbook, 4 columns
PMLL4150; PMLL4151; PMLL4153
DESCRIPTION
The PMLL4150, PMLL4151, PMLL4153 are high-speed switching diodes
fabricated in planar technology, and encapsulated in small hermetically sealed
glass SOD80C SMD packages.
k
a
MAM061
Cathode indicated by black band.
Fig.1 Simplified outline (SOD80C) and symbol.
1996 Sep 18
2
Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
PARAMETER
repetitive peak reverse voltage
PMLL4151
PMLL4153
V
R
I
F
continuous reverse voltage
continuous forward current
PMLL4150
PMLL4151
PMLL4153
I
FRM
repetitive peak forward current
PMLL4150
PMLL4151
PMLL4153
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
500
+200
200
A
A
A
mW
°C
°C
−
−
−
600
450
450
mA
mA
mA
see Fig.2; note 1
−
−
−
300
200
200
mA
mA
mA
−
−
−
75
75
50
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
1996 Sep 18
3
Philips Semiconductors
Product specification
High-speed diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
PMLL4150
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
PMLL4151
PMLL4153
I
F
= 50 mA
I
F
= 0.1 mA
I
F
= 0.25 mA
I
F
= 1 mA
I
F
= 2 mA
I
F
= 10 mA
I
F
= 50 mA
I
R
reverse current
PMLL4150
PMLL4151
PMLL4153
I
R
reverse current
PMLL4150
PMLL4151
PMLL4153
C
d
diode capacitance
PMLL4150
PMLL4151
PMLL4153
PMLL4150; PMLL4151; PMLL4153
CONDITIONS
MIN.
540
660
760
820
870
−
490
530
590
620
700
740
−
−
−
MAX.
620
740
860
920
1000
1000
550
590
670
700
810
880
0.1
UNIT
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
µA
V
R
= 50 V; see Fig.5
0.05
µA
0.05
µA
100
50
50
2.5
2
2
µA
µA
µA
pF
pF
pF
V
R
= 50 V; T
j
= 150
°C;
see Fig.5
−
−
−
f = 1 MHz; V
R
= 0; see Fig.6
−
−
1996 Sep 18
4
Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
SYMBOL
t
rr
PARAMETER
reverse recovery time
PMLL4150
CONDITIONS
when switched from I
F
= 10 mA to
I
R
= 1 mA; R
L
= 100
Ω;
measured at
I
R
= 0.1 mA; see Fig.7
when switched from I
F
= 10 mA to
200 mA to I
R
= 10 mA to 200 mA;
R
L
= 100
Ω;
measured at I
R
= 0.1
×
I
F
;
see Fig.7
when switched from I
F
= 200 mA to
400 mA to I
R
= 200 mA to 400 mA;
R
L
= 100
Ω;
measured at I
R
= 0.1
×
I
F
;
see Fig.7
MIN.
−
−
MAX.
6
4
UNIT
ns
ns
−
6
ns
t
rr
reverse recovery time
PMLL4151
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA; see Fig.7
−
−
4
2
ns
ns
t
rr
reverse recovery time
PMLL4153
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA; see Fig.7
−
−
4
2
ns
ns
t
fr
forward recovery time
when switched to I
F
= 200 mA; t
r
= 0.4 ns;
measured at V
F
= 1 V; see Fig.8
−
10
ns
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
300
350
UNIT
K/W
K/W
1996 Sep 18
5
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